发明授权
- 专利标题： Formation of etch-resistant resists through preferential permeation
- 专利标题（中）： 通过优先渗透形成耐腐蚀抗蚀剂
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申请号： US741779申请日： 1985-06-06
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公开(公告)号： US4613398A公开(公告)日： 1986-09-23
- 发明人: Kaolin N. Chiong , Bea-Jane L. Yang , Jer-Ming Yang
- 申请人： Kaolin N. Chiong , Bea-Jane L. Yang , Jer-Ming Yang
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; G03F7/26 ; H01L21/3065 ; B44C1/22 ; B29C17/08 ; C03C15/00 ; C03C25/06
摘要：
A method is provided for creation of oxygen etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide-forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.
公开/授权文献
- US5158546A Controlled action self-mixing vial 公开/授权日：1992-10-27
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