Patterned resist and process
    1.
    发明授权
    Patterned resist and process 失效
    图案抗蚀剂和工艺

    公开(公告)号:US4737425A

    公开(公告)日:1988-04-12

    申请号:US872584

    申请日:1986-06-10

    CPC分类号: G03F7/38 G03F7/405

    摘要: A patterned image including on a substrate, a patterned image of a first resist polymeric material and patterned image of a second and different resist material on the first resist polymeric material. The polymeric material contains reactive hydrogen functional groups and/or reactive hydrogen precursor groups. At least the surface layer of the delineated and uncovered first resist polymer material is reacted with a multifunctional organometallic material containing at least two functional groups that are reactive with the functional groups of the polymeric material.

    摘要翻译: 包括在衬底上的图案化图像,第一抗蚀聚合物材料的图案化图像和在第一抗蚀剂聚合物材料上的第二和不同抗蚀剂材料的图案化图像。 聚合物材料包含反应性氢官能团和/或反应性氢前体基团。 至少所描绘和未覆盖的第一抗蚀剂聚合物材料的表面层与含有至少两个与聚合物材料的官能团反应的官能团的多官能有机金属材料反应。

    Photoresist compositions of controlled dissolution rate in alkaline
developers
    2.
    发明授权
    Photoresist compositions of controlled dissolution rate in alkaline developers 失效
    在碱性显影剂中控制溶解速率的光致抗蚀剂组合物

    公开(公告)号:US4980264A

    公开(公告)日:1990-12-25

    申请号:US809948

    申请日:1985-12-17

    CPC分类号: G03F7/0233 G03F7/0125

    摘要: A photoresist composition is disclosed which is a mixture of a photoactive compound and an alkali soluble resin binder comprises of an unsaturated dicarboxylic acid esterified polymeric material, such as a phenolic resin containing a plurality of acid esterifiable groups esterified with an unsaturated dicarboxylic acid anhydride having the formula ##STR1## wherein R.sub.1 and R.sub.2 are independently selected from hydrogen and alkyl groups containing 1 to 3 carbon atoms, R.sub.3 and R.sub.4 are alkylene groups containing 1 to 3 carbon atoms and x and y are either 0 or 1.

    摘要翻译: 公开了一种光致抗蚀剂组合物,其是光活性化合物和碱溶性树脂粘合剂的混合物,其包含不饱和二羧酸酯化聚合物材料,例如含有多个可酸酯化基团的酚醛树脂,所述不饱和二羧酸酐具有 式其中R 1和R 2独立地选自氢和含有1至3个碳原子的烷基,R 3和R 4是含有1至3个碳原子的亚烷基,x和y是0或1。

    Formation of etch-resistant resists through preferential permeation
    3.
    发明授权
    Formation of etch-resistant resists through preferential permeation 失效
    通过优先渗透形成耐腐蚀抗蚀剂

    公开(公告)号:US4613398A

    公开(公告)日:1986-09-23

    申请号:US741779

    申请日:1985-06-06

    CPC分类号: G03F7/265

    摘要: A method is provided for creation of oxygen etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide-forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.

    摘要翻译: 提供了一种用于产生用于生产微米和亚微米尺寸图案和细线的耐氧蚀蚀聚合物膜的方法。 这些耐蚀刻聚合物膜可用于制造诸如电子器件和磁性薄膜头中的那些复杂结构。 通过使用有机金属材料优先渗透到聚合物材料中,将形成保护性氧化物的金属掺入聚合材料中来实现耐蚀刻性。