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205 条记录 (耗时 0.017 秒)

    Process for smoothing a non-planar surface
    1.
    发明授权
    Process for smoothing a non-planar surface 失效
    用于平滑非平面表面的工艺

    公开(公告)号：US4655874A

    公开(公告)日：1987-04-07

    申请号：US759625

    申请日：1985-07-26

    申请人： Steven Marks

    发明人： Steven Marks

    IPC分类号： H01L21/027 ,  H01L21/3105 ,  B44C1/22 ,  B29C17/08 ,  C03C15/00 ,  C03C25/06

    CPC分类号： H01L21/31055 ,  H01L21/0274

    摘要： An improvement in the process of constructing an integrated circuit structure in which a photoresist layer is applied to an integrated circuit structure followed by plasma etching of the structure is disclosed which comprises exposing the photoresist material to light, preferably UV light, prior to the etching step whereby the surface of the structure beneath the photoresist will be smooth after the etching step and removal of the photoresist.

    摘要翻译： 公开了构造集成电路结构的过程中的改进，其中将光致抗蚀剂层应用于集成电路结构，然后等离子体蚀刻该结构，其包括在蚀刻步骤之前将光致抗蚀剂材料曝光（优选UV光） 由此在蚀刻步骤和去除光致抗蚀剂之后，光致抗蚀剂下面的结构的表面将是光滑的。

    Double layer photoresist technique for side-wall profile control in plasma etching processes
    2.
    发明授权
    Double layer photoresist technique for side-wall profile control in plasma etching processes 失效
    用于等离子体蚀刻工艺中侧壁轮廓控制的双层光刻胶技术

    公开(公告)号：US4645562A

    公开(公告)日：1987-02-24

    申请号：US728012

    申请日：1985-04-29

    申请人： Kuan Y. Liao ,  Kuang-Yeh Chang ,  Hsing-Chien Ma

    发明人： Kuan Y. Liao ,  Kuang-Yeh Chang ,  Hsing-Chien Ma

    IPC分类号： H01L21/302 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  B44C1/22 ,  B29C17/08 ,  C03C15/00 ,  C03C25/06

    CPC分类号： H01L21/32137 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136

    摘要： A photolithographic process useful for VLSI fabrication is disclosed for achieving side-wall profile control of poly lines, metal lines, contact and via openings. Layers of a first and second photoresist materials are formed on the poly, metal or oxide-covered substrate. The top layer is patterned by conventional processes to define the final device geometry. The bottom layer is exposed and over-developed to form an overhang structure about the line pattern or the contact/via opening. During the subsequent anisotropic plasma-assisted etching step, some ions or particles are passed obliquely over the overhang and bombard the opening corner, the side-wall and the under-cut area. The plasma-assisted etching step not only forms the poly or metal lines, or the contact or via opening, but also results in an opening with rounded corners and a smoothly tapered side-wall profile. The subsequent metal film deposition step results in a uniform film thickness around the edges of the opening. The process thus alleviates the problem of high contact resistance previously encountered as a result of dry etching the contact or via openings.

    摘要翻译： 公开了一种用于VLSI制造的光刻工艺，用于实现多线，金属线，接触和通孔的侧壁轮廓控制。 第一和第二光致抗蚀剂材料的层在多金属或氧化物覆盖的基底上形成。 通过常规方法对顶层进行图案化以定义最终的装置几何形状。 底层暴露并过度显影以形成围绕线图案或接触/通孔开口的悬垂结构。 在随后的各向异性等离子体辅助蚀刻步骤中，一些离子或颗粒倾斜地穿过悬垂物并且轰击开口角，侧壁和下切区域。 等离子体辅助蚀刻步骤不仅形成多个或金属线，或接触或通孔，而且还形成具有圆角和平滑锥形侧壁轮廓的开口。 随后的金属膜沉积步骤导致围绕开口边缘的均匀的膜厚度。 因此，该方法减轻了由于干蚀刻接触或通孔的结果而先前遇到的高接触电阻的问题。

    Methods for selectively removing adhesives from polyimide substrates
    3.
    发明授权
    Methods for selectively removing adhesives from polyimide substrates 失效
    从聚酰亚胺基板选择性去除粘合剂的方法

    公开(公告)号：US4639290A

    公开(公告)日：1987-01-27

    申请号：US806874

    申请日：1985-12-09

    申请人： Richard N. Leyden ,  Robert Lawrence

    发明人： Richard N. Leyden ,  Robert Lawrence

    IPC分类号： H05K3/06 ,  C09K13/00 ,  H05K1/00 ,  H05K1/03 ,  H05K3/00 ,  H05K3/38 ,  B44C1/22 ,  B29C17/08 ,  C03C15/00 ,  C23F1/02

    CPC分类号： C09K13/00 ,  H05K3/002 ,  H05K1/0346 ,  H05K1/0393 ,  H05K2201/0154 ,  H05K2203/0554 ,  H05K3/386

    摘要： Methods for forming holes of predetermined size in polyimide substrates having metallic layers adhesively attached thereto include selectively removing areas of desired size and shape from the metallic layer; contacting the exposed adhesive layer with a selective etchant therefor that does not affect the polyimide substrate or undercut the adhesive near the opening formed; and selectively etching the polyimide substrate exposed in the openings by removal of the adhesive layer overlying the polyimides. These methods permit rapid, efficient formation of holes having a diameter as small as one mil (0.00254 cm).

    摘要翻译： 在具有粘附附着金属层的聚酰亚胺基板中形成预定尺寸的孔的方法包括从金属层选择性地去除所需尺寸和形状的区域; 使暴露的粘合剂层与选择性蚀刻剂接触，其不影响聚酰亚胺基底或在形成的开口附近底切底层; 并且通过去除覆盖聚酰亚胺的粘合剂层来选择性地蚀刻在开口中暴露的聚酰亚胺基板。 这些方法允许快速有效地形成直径小至1密耳（0.00254cm）的孔。

    Formation of etch-resistant resists through preferential permeation
    5.
    发明授权
    Formation of etch-resistant resists through preferential permeation 失效
    通过优先渗透形成耐腐蚀抗蚀剂

    公开(公告)号：US4613398A

    公开(公告)日：1986-09-23

    申请号：US741779

    申请日：1985-06-06

    申请人： Kaolin N. Chiong ,  Bea-Jane L. Yang ,  Jer-Ming Yang

    发明人： Kaolin N. Chiong ,  Bea-Jane L. Yang ,  Jer-Ming Yang

    IPC分类号： H01L21/302 ,  G03F7/26 ,  H01L21/3065 ,  B44C1/22 ,  B29C17/08 ,  C03C15/00 ,  C03C25/06

    CPC分类号： G03F7/265

    摘要： A method is provided for creation of oxygen etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide-forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.

    摘要翻译： 提供了一种用于产生用于生产微米和亚微米尺寸图案和细线的耐氧蚀蚀聚合物膜的方法。 这些耐蚀刻聚合物膜可用于制造诸如电子器件和磁性薄膜头中的那些复杂结构。 通过使用有机金属材料优先渗透到聚合物材料中，将形成保护性氧化物的金属掺入聚合材料中来实现耐蚀刻性。

    Multilayer planarizing structure for lift-off technique
    6.
    发明授权
    Multilayer planarizing structure for lift-off technique 失效
    用于剥离技术的多层平面结构

    公开(公告)号：US4532002A

    公开(公告)日：1985-07-30

    申请号：US598745

    申请日：1984-04-10

    申请人： Lawrence K. White

    发明人： Lawrence K. White

    IPC分类号： G03F7/09 ,  H01L21/027 ,  B44C1/22 ,  B29C17/08 ,  C03C15/00 ,  C03C25/06

    CPC分类号： G03F7/094 ,  H01L21/0272

    摘要： An improved method of forming a patterned layer of metallization on a substrate having topographical features is provided. A layer of a polymeric lift-off material is initially spin-coated onto the substrate, and a layer of a polymeric planarizing material spin-coated thereover. The dry etch rate of the lift-off layer is at least 1.2 times faster than that of the planarizing layer thereby forming a reverse slope wall profile in openings etched through both layers. A patterned hardmask layer is suitably used to dry etch the planarizing and lift-off layers, preferably in an oxygen-containing plasma. A layer of metallization is then deposited thereon. The metal in the openings is discontinuous from that deposited over the hardmask because of the reverse slope wall profile of the openings in the planarizing layers. The structure is then contacted with an organic solvent which penetrates to the base of the lift-off layer, again due to the reverse slope wall profile. The entire structure can thereupon be lifted from the substrate leaving the patterned metallization.

    摘要翻译： 提供了一种在具有形貌特征的基底上形成图案化金属化层的改进方法。 首先将一层聚合物剥离材料旋涂在基材上，并在其上旋涂一层聚合物平面化材料。 剥离层的干蚀刻速率比平坦化层的干蚀刻速率快至少1.2倍，从而在通过两层蚀刻的开口中形成反向倾斜壁轮廓。 图案化的硬掩模层适合用于干燥蚀刻平坦化和剥离层，优选地在含氧等离子体中蚀刻。 然后在其上沉积金属化层。 开口中的金属由于平坦化层中的开口的反向倾斜壁轮廓而与沉积在硬掩模上的金属不连续。 然后将结构与渗透到剥离层的底部的有机溶剂接触，这又是由于反向倾斜壁轮廓。 整个结构可以随后从衬底上提起留下图案化的金属化。

    Method for forming semiconductor devices
    7.
    发明授权
    Method for forming semiconductor devices 失效
    半导体器件形成方法

    公开(公告)号：US4523976A

    公开(公告)日：1985-06-18

    申请号：US627264

    申请日：1984-07-02

    申请人： Yefim Bukhman

    发明人： Yefim Bukhman

    IPC分类号： H01L21/311 ,  H01L21/312 ,  H01L21/768 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06 ,  B29C17/08

    CPC分类号： H01L21/76804 ,  H01L21/31138 ,  H01L21/312

    摘要： A method is disclosed for forming openings in polyimide layers and for thereby forming semiconductor devices. The method allows for the forming of openings having tapered side walls and precise dimensional control. First and second layers of polyimide are sequentially formed on a surface. The first layer, in contact with the surface, is fully cured while the second layer is only partially cured. Overlying the second layer is a masking layer which can alternatively be an inorganic material or a resist material. A pattern is formed in the masking layer to expose portions of the upper polyimide layer. The pattern includes openings of predetermined size having a precise critical dimension. Using the patterned masking layer as an etch mask the upper layer of polyimide is isotropically etched in an etchent which etches the partially cured polyimide but which does not etch the fully cured underlying polyimide. The underlying polyimide layer is then anisotropically etched using the patterned masking layer as an etch mask to form openings in the cured polyimide layer having the same critical dimensions as in the masking layer pattern. The masking layer is then removed and the second polyimide layer is fully cured.

    摘要翻译： 公开了一种用于在聚酰亚胺层中形成开口并由此形成半导体器件的方法。 该方法允许形成具有锥形侧壁和精确尺寸控制的开口。 在表面上依次形成第一和第二层聚酰亚胺。 与表面接触的第一层完全固化，而第二层仅部分固化。 覆盖第二层是掩模层，其可以替代地是无机材料或抗蚀剂材料。 在掩模层中形成图案以暴露上部聚酰亚胺层的部分。 该图案包括具有精确临界尺寸的预定尺寸的开口。 使用图案化掩模层作为蚀刻掩模，在蚀刻部分固化的聚酰亚胺但不蚀刻完全固化的下面的聚酰亚胺的等离子体中各向同性蚀刻聚酰亚胺的上层。 然后使用图案化掩模层作为蚀刻掩模对下面的聚酰亚胺层进行各向异性蚀刻，以在具有与掩模层图案相同的临界尺寸的固化聚酰亚胺层中形成开口。 然后去除掩模层，第二聚酰亚胺层完全固化。