发明授权
US4638400A Refractory metal capacitor structures, particularly for analog
integrated circuit devices
失效
耐火金属电容器结构，特别适用于模拟集成电路器件
- 专利标题： Refractory metal capacitor structures, particularly for analog integrated circuit devices
- 专利标题（中）： 耐火金属电容器结构，特别适用于模拟集成电路器件
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申请号： US790911申请日： 1985-10-24
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公开(公告)号： US4638400A公开(公告)日： 1987-01-20
- 发明人: Dale M. Brown , Manjin J. Kim , Richard D. Baertsch , Thomas L. Vogelsong
- 申请人： Dale M. Brown , Manjin J. Kim , Richard D. Baertsch , Thomas L. Vogelsong
- 申请人地址： NY Schenectady
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： NY Schenectady
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01G4/12 ; H01G4/33 ; H01G4/40 ; H01L21/822 ; H01L29/92 ; H01G1/015 ; B41M3/08 ; H01L27/02
摘要：
A capacitor structure which is particularly suitable for use in analog integrated circuit devices employs an intermediate layer of a refractory metal disposed in a thin layer overlying a flat dielectric surface. The thinness and the low reflectivity of the refractory metal facilitates precise patterning of the upper plate of the capacitor structure. In the present invention, capacitance is no longer determined by imprecise cuts through thick oxide layers or by patterning of thick metallization layers within these apertures. The use of refractory metals in the capacitor structure also readily permits the incorporation of resistive circuit elements.
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