发明授权
- 专利标题: Content addressable memory having dual access modes
- 专利标题(中): 具有双重访问模式的内容可寻址存储器
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申请号: US683611申请日: 1984-12-19
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公开(公告)号: US4646271A公开(公告)日: 1987-02-24
- 发明人: Kunio Uchiyama , Tadahiko Nishimukai
- 申请人: Kunio Uchiyama , Tadahiko Nishimukai
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX58-242012 19831223
- 主分类号: G11C15/04
- IPC分类号: G11C15/04 ; G11C13/00
摘要:
In a memory device having a content addressable memory array and a random access memory array, the word coincidence lines and word selection lines of the content addressable memory array are connected to the word selection lines of the corresponding words of the random access memory array via a selection circuit, access is made to the random access memory array on the basis of the result of association of the content addressable memory array when the selection circuit selects the word coincidence lines, and access is made to the memory device as a whole as a random access memory array when the selection circuit selects the word selection lines.
公开/授权文献
- US5803176A Sidetracking operations 公开/授权日:1998-09-08
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