发明授权
US4713354A Method of heat treatment for reduction of dislocation density near III-V
substrate surface
失效
用于减少III-V衬底表面附近位错密度的热处理方法
- 专利标题： Method of heat treatment for reduction of dislocation density near III-V substrate surface
- 专利标题（中）： 用于减少III-V衬底表面附近位错密度的热处理方法
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申请号： US834363申请日： 1986-02-28
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公开(公告)号： US4713354A公开(公告)日： 1987-12-15
- 发明人: Takashi Egawa , Yoshiaki Sano
- 申请人： Takashi Egawa , Yoshiaki Sano
- 申请人地址： JPX Tokyo
- 专利权人： Oki Electric Industry Co., Ltd.
- 当前专利权人： Oki Electric Industry Co., Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX60-40130 19850228
- 主分类号： H01L29/812
- IPC分类号： H01L29/812 ; H01L21/20 ; H01L21/265 ; H01L21/324 ; H01L21/338 ; H01L21/322
摘要：
In a method of manufacturing semiconductor devices wherein a III-V compound semiconductor substrate is annealed in gas atmosphere of which the gas includes an element constituting the III-V compound semiconductor substrate to reduce the dislocation density near the III-V compound semiconductor substrate surface.
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