发明授权
- 专利标题： Process for the production of mutually electrically insulated monocrystalline silicon islands using laser recrystallization
- 专利标题（中）： 使用激光再结晶生产相互电绝缘的单晶硅岛的方法
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申请号： US882901申请日： 1986-06-05
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公开(公告)号： US4725561A公开(公告)日： 1988-02-16
- 发明人: Michel Haond , Jean-Pierre Colinge , Daniel Bensahel , Didier Dutartre
- 申请人： Michel Haond , Jean-Pierre Colinge , Daniel Bensahel , Didier Dutartre
- 专利权人： Michel Haond,Colinge Jean Pierre,Daniel Bensahel,Didier Dutartre
- 当前专利权人： Michel Haond,Colinge Jean Pierre,Daniel Bensahel,Didier Dutartre
- 优先权： FRX8415302 19851005
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/762 ; H01L21/263 ; H01L21/76 ; H01L21/95
摘要：
This process consists of producing patterns (17) of an insulating material on a monocrystalline silicon substrate (12), depositing on the complete structure an amorphous or polycrystalline silicon film (26), covering the latter with a layer (28) of an encapsulating material, carrying out a heat treatment on the structure obtained serving to vertically embed in substrate (12) the insulating material patterns (17) and forming above the latter a monocrystalline silicon layer (33), eliminating the encapsulating material layer (28) and etching the monocrystalline silicon layer obtained (33), so as to form said islands (34).
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