发明授权
- 专利标题： Process for making isolated semiconductor structure
- 专利标题（中）： 制造隔离半导体结构的工艺
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申请号： US891792申请日： 1986-10-02
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公开(公告)号： US4727048A公开(公告)日： 1988-02-23
- 发明人: John M. Pierce , William I. Lehrer
- 申请人： John M. Pierce , William I. Lehrer
- 申请人地址： CA Palo Alto
- 专利权人： Fairchild Camera & Instrument Corporation
- 当前专利权人： Fairchild Camera & Instrument Corporation
- 当前专利权人地址： CA Palo Alto
- 主分类号： H01L21/3105
- IPC分类号： H01L21/3105 ; H01L21/316 ; H01L21/762 ; H01L23/31 ; H01L21/473
摘要：
An integrated circuit structure comprises a plurality of islands of semiconductor material (16-1 through 16-5) each island being separated from adjacent islands by a groove formed in annular shape around said island to laterally define the dimensions of each such island, an oxide (12, 14) formed over the surface of said grooves (13-1 through 13-6) and said islands and a selected glass (15) deposited on said oxide (14) in the grooves and over the top surface of said device, said glass having the property that it flows at a temperature beneath the temperature at which dopants in the islands of semiconductor material substantially redistribute, said selected glass (15) having a substantially flat top surface thereby to give said structure a substantially flat top surface.
公开/授权文献
- US5838010A Spatial resolution improvement for gamma camera 公开/授权日：1998-11-17
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