公开(公告)号：US4727048A

公开(公告)日：1988-02-23

申请号：US891792

申请日：1986-10-02

申请人： John M. Pierce ,  William I. Lehrer

发明人： John M. Pierce ,  William I. Lehrer

IPC分类号： H01L21/3105 ,  H01L21/316 ,  H01L21/762 ,  H01L23/31 ,  H01L21/473

CPC分类号： H01L23/3178 ,  H01L21/3105 ,  H01L21/31604 ,  H01L21/76224 ,  H01L2924/0002

摘要： An integrated circuit structure comprises a plurality of islands of semiconductor material (16-1 through 16-5) each island being separated from adjacent islands by a groove formed in annular shape around said island to laterally define the dimensions of each such island, an oxide (12, 14) formed over the surface of said grooves (13-1 through 13-6) and said islands and a selected glass (15) deposited on said oxide (14) in the grooves and over the top surface of said device, said glass having the property that it flows at a temperature beneath the temperature at which dopants in the islands of semiconductor material substantially redistribute, said selected glass (15) having a substantially flat top surface thereby to give said structure a substantially flat top surface.

摘要翻译： 集成电路结构包括多个岛状半导体材料（16-1至16-5），每个岛通过围绕所述岛形成为环形的沟槽与相邻的岛分离，以横向限定每个这样的岛的尺寸，氧化物 （13-1至13-6）和所述岛的表面上形成的（12,14）和沉积在所述凹槽中的所述氧化物（14）上并且在所述装置的顶表面上的选定的玻璃（15） 所述玻璃具有其在半导体材料岛的掺杂剂基本上重新分布的温度以下的温度下流动的性质，所述选定的玻璃（15）具有基本上平坦的顶表面，从而使所述结构基本上平坦的顶表面。

公开(公告)号：US4619844A

公开(公告)日：1986-10-28

申请号：US693401

申请日：1985-01-22

申请人： John M. Pierce ,  William I. Lehrer

发明人： John M. Pierce ,  William I. Lehrer

IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/00 ,  B05C11/00

CPC分类号： C23C16/4485

摘要： A method of introducing a controlled flow of vapor from a high pressure sublimation chamber into a low pressure vapor deposition reactor, said vapor being derived from solid source material preferably, but not necessarily, having a vapor pressure above about one (1) Torr at a temperature not exceeding about 350.degree. C. The method comprises controllably heating the source material to a temperature sufficient to produce vapor therefrom at a desired pressure, and then controllably transferring the vapor through vapor transmission means to the vapor deposition reactor. During such transfer, the transmission means is maintained at a temperature sufficient to prevent condensation of the vapor therein during transfer. The vapor is delivered to the reactor in a pure state and is not mixed with any carrier medium.

摘要翻译： 将受控的蒸汽流从高压升华室引入低压气相沉积反应器的方法，所述蒸汽源自固体源材料，优选但不一定具有高于约一（1）乇的蒸气压， 温度不超过约350℃。该方法包括可控地将源材料加热到足以在所需压力下产生蒸汽的温度，然后通过蒸气传输装置将蒸汽可控地转移到气相沉积反应器。 在这种转移期间，传动装置保持在足以防止在传送期间蒸气冷凝的温度。 蒸汽以纯的状态输送到反应器中，并且不与任何载体介质混合。

公开(公告)号：US4387145A

公开(公告)日：1983-06-07

申请号：US306116

申请日：1981-09-28

申请人： William I. Lehrer ,  John H. Vincak

发明人： William I. Lehrer ,  John H. Vincak

IPC分类号： G03F7/09 ,  H01L21/027 ,  H01L21/033 ,  H01L21/316 ,  G03C5/00 ,  B44C1/22 ,  G03F5/00

CPC分类号： H01L21/02112 ,  G03F7/094 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0272 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31608 ,  Y10S438/944 ,  Y10S438/951

摘要： A method for forming a predetermined configuration of a film material comprises the steps of forming a layer of a first material on a surface, forming a layer of a second material on the first material wherein the first material has an etch rate greater than that of the second material when the first material and the second material are exposed to a common etchant, etching portions of the second material and underlying portions of the first material to expose portions of the surface, forming a layer of film material on the exposed portions of the surface, forming a layer of film material on the exposed portions of the surface and on the remaining portions of the second material, and removing the remaining portions of the first material such that the overlying second material and the film material thereon is also removed.

摘要翻译： 用于形成薄膜材料的预定构造的方法包括以下步骤：在表面上形成第一材料层，在第一材料上形成第二材料层，其中第一材料的蚀刻速率大于 当第一材料和第二材料暴露于常见的蚀刻剂时，蚀刻第二材料，蚀刻第二材料的部分和第一材料的下面部分以暴露表面的部分，在表面的暴露部分上形成薄膜材料层 在所述表面的暴露部分和所述第二材料的剩余部分上形成薄膜材料层，以及去除所述第一材料的剩余部分，使得其上覆盖的第二材料和所述薄膜材料也被去除。

公开(公告)号：US4704342A

公开(公告)日：1987-11-03

申请号：US719020

申请日：1985-04-02

申请人： William I. Lehrer ,  P. Anthony Crossley

发明人： William I. Lehrer ,  P. Anthony Crossley

IPC分类号： G03F1/54 ,  G03F1/56 ,  G03F9/00

CPC分类号： G03F1/56 ,  G03F1/54 ,  Y10S430/146

摘要： A photomask for use in manufacturing integrated circuits is fabricated by coating a thin film of organic material, generally a solution of a thermally decomposable hydrocarbon, onto a glass plate and heating it in a reducing atmosphere to convert it into carbon. The carbon layer is masked and etched; for example, in an oxygen plasma, to produce the mask.

摘要翻译： 用于制造集成电路的光掩模通过将有机材料薄膜（通常为可热分解的烃的溶液）涂覆在玻璃板上并在还原气氛中加热以将其转化为碳来制造集成电路。 对碳层进行掩模蚀刻; 例如在氧等离子体中制造掩模。

公开(公告)号：US4654269A

公开(公告)日：1987-03-31

申请号：US747471

申请日：1985-06-21

申请人： William I. Lehrer

发明人： William I. Lehrer

IPC分类号： C23C18/12 ,  C23C16/40 ,  C23C28/04 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  B65D5/12

CPC分类号： H01L23/5329 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/76801 ,  H01L21/76819 ,  H01L21/76828 ,  H01L2924/0002 ,  Y10S428/901

摘要： There is disclosed herein a stress relieved intermediate insulating layer consisting of one or more layers of spun-on glass lying over a metalization pattern. The spun-on layers are allowed to crack from thermal stress imposed upon the structure. The cracks in the spun-on layers are then filled with a glass layer deposited by CVD or LPCVD.

摘要翻译： 本文公开了一种应力消除中间绝缘层，其由位于金属化图案上的一层或多层纺丝玻璃构成。 允许旋转层从施加在结构上的热应力开裂。 然后，通过CVD或LPCVD沉积的玻璃层填充旋涂层中的裂纹。

公开(公告)号：US4630343A

公开(公告)日：1986-12-23

申请号：US773842

申请日：1985-09-06

申请人： John M. Pierce ,  William I. Lehrer

发明人： John M. Pierce ,  William I. Lehrer

IPC分类号： H01L21/3105 ,  H01L21/316 ,  H01L21/762 ,  H01L23/31 ,  H01L21/461

CPC分类号： H01L21/3105 ,  H01L21/316 ,  H01L21/31604 ,  H01L21/76224 ,  H01L23/3178 ,  H01L2924/0002

摘要： An integrated circuit structure comprises a plurality of islands of semiconductor material (16-1 through 16-5) each island being separated from adjacent islands by a groove formed in annular shape around said island to laterally define the dimensions of each such island, an oxide (12, 14) formed over the surface of said grooves (13-1 through 13-6) and said islands and a selected glass (15) deposited on said oxide (14) in the grooves and over the top surface of said device, said glass having the property that it flows at a temperature beneath the temperature at which dopants in the islands of semiconductor material substantially redistribute, said selected glass (15) having a substantially flat top surface thereby to give said structure a substantially flat top surface.

摘要翻译： 集成电路结构包括多个岛状半导体材料（16-1至16-5），每个岛通过围绕所述岛形成为环形的沟槽与相邻的岛分离，以横向限定每个这样的岛的尺寸，氧化物 （13-1至13-6）和所述岛的表面上形成的（12,14）和沉积在所述凹槽中的所述氧化物（14）上并且在所述装置的顶表面上的选定的玻璃（15） 所述玻璃具有其在半导体材料岛的掺杂剂基本上重新分布的温度以下的温度下流动的性质，所述选定的玻璃（15）具有基本上平坦的顶表面，从而使所述结构基本上平坦的顶表面。

公开(公告)号：US4490737A

公开(公告)日：1984-12-25

申请号：US362322

申请日：1982-03-26

申请人： John M. Pierce ,  William I. Lehrer

发明人： John M. Pierce ,  William I. Lehrer

IPC分类号： C03C3/062 ,  C03C3/097 ,  C03C4/16 ,  H01L21/316 ,  H01L23/29 ,  H01L23/532 ,  H05K1/03 ,  H05K3/28 ,  H01L23/30 ,  H01L29/34 ,  C03C3/04

CPC分类号： H01L23/291 ,  C03C3/062 ,  C03C3/097 ,  C03C4/16 ,  H01L21/316 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/3011 ,  H05K1/0306 ,  H05K3/28

摘要： A low temperature insulating glass for use in semiconductor devices comprises a mixture of germanium, silicon, oxygen and phosphorus. In the preferred embodiment, the glass comprises a mixture of about 40% to 55% silicon dioxide (SiO.sub.2), about 55% to 40% of germanium dioxide (GeO.sub.2) and from 1% to about 5% of phosphorus pentoxide (P.sub.2 O.sub.5), by mole percent.

摘要翻译： 用于半导体器件的低温绝缘玻璃包括锗，硅，氧和磷的混合物。 在优选的实施方案中，玻璃包含约40％至55％的二氧化硅（SiO 2），约55％至40％的二氧化锗（GeO 2）和1％至约5％的五氧化二磷（P 2 O 5）的混合物， 按摩尔％计。

公开(公告)号：US4619839A

公开(公告)日：1986-10-28

申请号：US680878

申请日：1984-12-12

申请人： William I. Lehrer

发明人： William I. Lehrer

IPC分类号： H01L21/316 ,  H01L21/768

CPC分类号： H01L21/316 ,  H01L21/76819

摘要： A method for forming a substantially planar inorganic dielectric layer over a predetermined pattern of electrical interconnects comprises the steps of reacting phosphoric acid and a trivalent metallic halide compound with an aliphatic solvent to form a coating fluid. The coating fluid is then spun onto the semiconductor device to form a layer over the electrical interconnect. The resultant device is then baked at a first temperature to drive off the solvent and then baked at a second, higher temperature, in order to promote the glass forming reaction. This process is repeated as required to form a coating layer having a thickness which exhibits levelling characteristics of such high quality that fine topography can be carried out on succeeding layers of metal in order to form additional interconnect layers with precision.

摘要翻译： 在预定的电互连图案上形成基本平面的无机介电层的方法包括使磷酸和三价金属卤化物与脂肪族溶剂反应形成涂布液的步骤。 然后将涂布液旋转到半导体器件上以在电互连上形成层。 然后将所得装置在第一温度下烘烤以驱除溶剂，然后在第二个较高温度下烘烤，以促进玻璃形成反应。 根据需要重复该过程以形成具有如下高质量的平整特性的涂层的涂层，从而可以在后续的金属层上进行精细的形貌，以便精确地形成附加的互连层。

公开(公告)号：US4431900A

公开(公告)日：1984-02-14

申请号：US339601

申请日：1982-01-15

申请人： Michelangelo Delfino ,  William I. Lehrer

发明人： Michelangelo Delfino ,  William I. Lehrer

IPC分类号： H01L29/78 ,  H01L21/268 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/768 ,  B23K27/00

CPC分类号： H01L21/02126 ,  H01L21/02129 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02354 ,  H01L21/268 ,  H01L21/3105 ,  H01L21/31608 ,  H01L21/76804 ,  H01L21/76819 ,  H01L21/76828 ,  Y10S438/978

摘要： In a semiconductor device, laser energy is used to selectively heat various SiO.sub.2 and/or GeO.sub.2 based materials to elevated temperatures while maintaining the active device region and electrical interconnects at relatively low temperatures, to for example, induce densification and/or flow of the SiO.sub.2 and/or GeO.sub.2 based material to round off sharp edges and stops, without damaging or affecting the active region and electrical interconnects.

摘要翻译： 在半导体器件中，使用激光能量将各种SiO 2和/或GeO 2基材料选择性地加热至升高的温度，同时将活性器件区域和电互连保持在相对较低的温度，例如诱导致密化和/或流动的SiO 2 和/或基于GeO2的材料，以切除锋利的边缘并停止，而不损坏或影响有源区域和电互连。

公开(公告)号：US4420365A

公开(公告)日：1983-12-13

申请号：US474866

申请日：1983-03-14

申请人： William I. Lehrer

发明人： William I. Lehrer

IPC分类号： H01L21/027 ,  H01L21/288 ,  H01L21/311 ,  H05K3/00 ,  H05K3/18 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H05K3/184 ,  H01L21/0272 ,  H01L21/288 ,  H01L21/31144 ,  H05K3/0017 ,  Y10S438/903

摘要： A novel process is disclosed for the selective etching of a protective layer over a substrate according to a predetermined pattern, which does not involve the use of chemical vapor deposition or vacuum techniques. The process incorporates the techniques of electroless metal deposition after first applying a mask which is positive with respect to the predetermined pattern. In alternative embodiments, the application to the masked protective layer of an agent catalytic to the reception of electroless metal deposition is followed by either immersion in an electroless plating bath and subsequent mask removal, or by mask removal and subsequent immersion in the electroless plating bath. In either embodiment, the protective layer is effectively masked and patterned for plasma etching. The process is useful in forming openings in the protective layer to permit selective doping of the underlying substrate.

摘要翻译： 公开了一种根据不涉及使用化学气相沉积或真空技术的预定图案在衬底上选择性地蚀刻保护层的新方法。 该方法在首先施加相对于预定图案为正的掩模之后，结合无电金属沉积技术。 在替代实施例中，对接触化学镀金属沉积的催化剂的掩蔽保护层的应用之后是浸入无电解镀浴中并随后进行掩模去除，或通过掩模去除并随后浸入化学镀浴中。 在任一实施例中，对于等离子体蚀刻，保护层被有效地掩蔽和图案化。 该方法可用于在保护层中形成开口以允许选择性掺杂下面的衬底。