发明授权
- 专利标题: Semiconductor memory
- 专利标题(中): 半导体存储器
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申请号: US915679申请日: 1986-10-06
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公开(公告)号: US4731761A公开(公告)日: 1988-03-15
- 发明人: Toshifumi Kobayashi
- 申请人: Toshifumi Kobayashi
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX60-222103 19851004
- 主分类号: G11C11/408
- IPC分类号: G11C11/408 ; G11C8/10 ; G11C8/12 ; G11C11/401 ; G11C11/413 ; G11C13/00
摘要:
A dynamic RAM with static column function comprising a predecoder for predecoding both the row address and the column address to output intermediate signals, a row decoder composed of NOR circuits for selecting one row in response to said intermediate signals, a column decoder composed of NAND circuits for selecting one column in response to said intermediate signals, and a logic inversion circuit for matching the logics for the intermediate signal between the row decoder and the column decoder.
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