发明授权
- 专利标题: Semiconductor memory
- 专利标题(中): 半导体存储器
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申请号: US837359申请日: 1986-03-06
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公开(公告)号: US4734889A公开(公告)日: 1988-03-29
- 发明人: Koichiro Mashiko , Yoshikazu Morooka , Tadato Yamagata , Yuto Ikeda
- 申请人: Koichiro Mashiko , Yoshikazu Morooka , Tadato Yamagata , Yuto Ikeda
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX60-59234 19850322
- 主分类号: G11C11/408
- IPC分类号: G11C11/408 ; G11C29/00 ; G11C13/00 ; G11C11/40
摘要:
A spare Y decoder is provided with MOS transistors 14 and 20 for charge on both sides of a parasitic resistor 19. As a result, nodes N1 and N2 are rapidly charged by the MOS transistors 20 and 14 for charge, respectively.
公开/授权文献
- US4164399A Wet scrubbing device 公开/授权日:1979-08-14
信息查询
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