发明授权
- 专利标题： Self-aligned process for fabricating small DMOS cells
- 专利标题（中）： 用于制造小型DMOS细胞的自对准方法
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申请号： US19785申请日： 1987-02-26
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公开(公告)号： US4774198A公开(公告)日： 1988-09-27
- 发明人: Claudio Contiero , Antonio Andreini , Paola Galbiati
- 申请人： Claudio Contiero , Antonio Andreini , Paola Galbiati
- 申请人地址： ITX Catania
- 专利权人： SGS Microelettronica SpA
- 当前专利权人： SGS Microelettronica SpA
- 当前专利权人地址： ITX Catania
- 优先权： ITX83608A/86 19860306
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/033 ; H01L21/336 ; H01L29/10 ; H01L21/425
摘要：
An improved fabrication process for vertical DMOS cells contemplates the prior definition of the gate areas by placing a polycrystalline silicon gate electrode and utilizing the gate electrode itself as a mask for implanting and diffusing the body regions, while forming the short region is carried out using self-alignment techniques which permit an easy control of the lateral extention of the region itself. A noncritical mask defines the zone where the short circuiting contact between the source electrode and the source and body regions in the middle of the DMOS cell will be made, also allowing the forming the source region. Opening of the relative contact is also effected by a self alignment technique, further simplifying the process.
公开/授权文献
- USD363386S Louvre for vertical blind 公开/授权日：1995-10-24
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