发明授权
- 专利标题: Multi-wavelength projection exposure and alignment apparatus
- 专利标题(中): 多波长投影曝光和对准装置
-
申请号: US16120申请日: 1987-02-18
-
公开(公告)号: US4798962A公开(公告)日: 1989-01-17
- 发明人: Koichi Matsumoto , Yutaka Suenaga , Makoto Uehara , Kiyoyuki Muramatsu
- 申请人: Koichi Matsumoto , Yutaka Suenaga , Makoto Uehara , Kiyoyuki Muramatsu
- 申请人地址: JPX Tokyo
- 专利权人: Nikon Corporation
- 当前专利权人: Nikon Corporation
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX61-38852 19860224
- 主分类号: G03F9/00
- IPC分类号: G03F9/00 ; H01L21/027 ; H01L21/30 ; H01L21/67 ; H01L21/68 ; G01B11/00
摘要:
A projection exposure apparatus has a pattern lighting optical system including an exposure light source for lighting a pattern on a photomask, a projection optical system for forming an image of the pattern lighted by the exposure light source on the surface of a wafer, an alignment lighting optical system including an alignment light source for lighting alignment marks on the photomask and the wafer, and an alignment optical system for detecting relative positional relationship between the mask pattern and the wafer through the projection optical system, and further the projection optical system includes an image-forming system which exhibits two extremums of axial aberration as a function of wavelength.
公开/授权文献
- US6098108A Distributed directory for enhanced network communication 公开/授权日:2000-08-01
信息查询