发明授权
- 专利标题: Schottky diode formed on MOSFET drain
- 专利标题(中): 在MOSFET漏极上形成肖特基二极管
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申请号: US899399申请日: 1986-08-22
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公开(公告)号: US4801983A公开(公告)日: 1989-01-31
- 发明人: Masahiro Ueno , Masahiro Iwamura , Kozaburo Kurita , Ikuro Masuda
- 申请人: Masahiro Ueno , Masahiro Iwamura , Kozaburo Kurita , Ikuro Masuda
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX60-189643 19850830
- 主分类号: H03K19/0944
- IPC分类号: H03K19/0944 ; H01L21/82 ; H01L21/8249 ; H01L27/06 ; H01L27/07 ; H03K17/687 ; H03K17/693 ; H03K19/094 ; H03K19/0952 ; H01L27/04 ; G11C11/40
摘要:
A unidirectional switching circuit having no charge storage effect for performing a high-speed switching operation is disclosed in which one of the anode and cathode terminals of a Schottky-barrier diode is connected to one of the source and drain terminals of a field effect transistor to form the series combination of the Schottky-barrier diode and the field effect transistor, that one of end terminals of the series combination which exists on the anode side of the diode, is used as an input terminal, the other end terminal existing on the cathode side is used as an output terminal, the gate electrode of the field effect transistor is used as a switching control electrode, and a current flowing through the switching circuit in a direction from the input terminal to the output terminal is controlled in accordance with a signal applied to the switching control electrode.
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