发明授权
- 专利标题: Apparatus for forming a thin film
- 专利标题(中): 用于形成薄膜的装置
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申请号: US113165申请日: 1987-10-27
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公开(公告)号: US4805555A公开(公告)日: 1989-02-21
- 发明人: Hiroki Itoh
- 申请人: Hiroki Itoh
- 申请人地址: JPX
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX
- 优先权: JPX61-255848 19861029; JPX62-56686 19870313; JPX62-110613 19870508
- 主分类号: H01L49/02
- IPC分类号: H01L49/02 ; C23C14/00 ; C23C14/22 ; C30B25/02 ; C23C16/00
摘要:
When reactive gases are directed toward a substrate disposed in a vacuum atmosphere, the reactive gases are activated by irradiation with an electron beams. The reactive gases react with vapor or cluster ions of a material to be deposited, thereby forming a thin film of the reaction products. Therefore, a thin film with high quality can be efficiently deposited on a substrate.
公开/授权文献
- USD427197S Computer front bezel 公开/授权日:2000-06-27
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