发明授权
- 专利标题： Semiconductor device having an electrode and a method of manufacturing the same
- 专利标题（中）： 具有电极的半导体装置及其制造方法
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申请号： US191747申请日： 1988-05-05
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公开(公告)号： US4809055A公开(公告)日： 1989-02-28
- 发明人: Masaru Ishibashi , Takeshi Tsubata , Kazumi Sasaki
- 申请人： Masaru Ishibashi , Takeshi Tsubata , Kazumi Sasaki
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX60-85489 19850423
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L21/28 ; H01L21/331 ; H01L23/485 ; H01L23/532 ; H01L29/732 ; H01L23/54 ; H01L23/14
摘要：
An SiO.sub.2 insulating layer is formed on an Si substrate, and an Si.sub.3 N.sub.4 insulating layer is formed on the SiO.sub.2 layer. A notch is formed in the Si.sub.3 N.sub.4 layer using a resist film as a mask. The SiO.sub.2 layer is etched using the Si.sub.3 N.sub.4 layer as a mask, thereby forming an opening larger than the notch cut in the SiO.sub.2 layer. As a result, the Si.sub.3 N.sub.4 layer extends over the opening in an overhanging manner. When As.sup.+ ions are implanted in the periphery of the notch of the Si.sub.3 N.sub.4 layer, the ion-implanted portion of the Si.sub.3 N.sub.4 layer is arcuated toward the base region. When a metal such as Ti is deposited on the arcuated portion, the metal is also deposited on the arcuated portion and the portion of the emitter region matching with the notch, thereby forming an emitter electrode portion.
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