发明授权
- 专利标题： Method of producing sheets of crystalline material
- 专利标题（中）： 生产结晶材料片的方法
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申请号： US128809申请日： 1987-12-04
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公开(公告)号： US4837182A公开(公告)日： 1989-06-06
- 发明人: Carl O. Bozler , John C. C. Fan , Robert W. McClelland
- 申请人： Carl O. Bozler , John C. C. Fan , Robert W. McClelland
- 申请人地址： MA Cambridge
- 专利权人： Massachusetts Institute of Technology
- 当前专利权人： Massachusetts Institute of Technology
- 当前专利权人地址： MA Cambridge
- 主分类号： C30B19/00
- IPC分类号： C30B19/00 ; C30B25/02 ; C30B25/04 ; C30B33/00 ; H01L21/20 ; H01L21/263 ; H01L21/84 ; H01L25/04 ; H01L31/04 ; H01L31/042 ; H01L31/0687 ; H01L31/18 ; H01S5/02
摘要：
A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is optionally separated so that the substrate can be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.
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