发明授权
- 专利标题: Wavelength-tunable semiconductor laser
- 专利标题(中): 波长可调半导体激光器
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申请号: US224726申请日: 1988-07-27
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公开(公告)号: US4873691A公开(公告)日: 1989-10-10
- 发明人: Kazuhisa Uomi , Shinji Tsuji , Shinji Sakano , Makoto Okai , Naoki Chinone
- 申请人: Kazuhisa Uomi , Shinji Tsuji , Shinji Sakano , Makoto Okai , Naoki Chinone
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX62-190040 19870731
- 主分类号: H01S5/00
- IPC分类号: H01S5/00 ; H01S3/1055 ; H01S5/042 ; H01S5/0625 ; H01S5/125 ; H01S5/34
摘要:
A wavelength-tunable semiconductor laser having an active part and an external waveguide part is disclosed. The external waveguide part has a diffraction grating, such as a distributed Bragg reflector, and a quantum well structure optically coupled to the diffraction grating, together with electrodes for impressing an electric field to the quantum well structure. By applying the electric filed to the quantum well structure, the refractive index in the optically coupled diffraction grating/quantum well structure, and light oscillation wavelength in the external waveguide part, can be varied.
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