发明授权
- 专利标题： Fabrication method of bipolar transistor
- 专利标题（中）： 双极晶体管的制造方法
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申请号： US249401申请日： 1988-09-26
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公开(公告)号： US4874712A公开(公告)日： 1989-10-17
- 发明人: Myung S. Kim , Hyun S. Kang , Soon K. Lim , Hee K. Park
- 申请人： Myung S. Kim , Hyun S. Kang , Soon K. Lim , Hee K. Park
- 申请人地址： KRX Gumi City
- 专利权人： Samsung Semiconductor & Telecommunication Co., Ltd.
- 当前专利权人： Samsung Semiconductor & Telecommunication Co., Ltd.
- 当前专利权人地址： KRX Gumi City
- 优先权： KRX87-10713 19870926
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L21/266 ; H01L21/331 ; H01L29/732
摘要：
Present invention relates to the fabrication method of the bipolar transistor.With this method the emitter of high-concentrated n-type is contacted closely to the extrinsic base of high-concentrated p-type.This structure is obtained by making the emitter of the bipolar transistor be self- aligned by the side wall under-cut of the nitride layer using double layers of the low temperature oxide and the nitride layer.
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