Invention Grant
- Patent Title: Thin film capacitor
- Patent Title (中): 薄膜电容器
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Application No.: US36398Application Date: 1987-04-09
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Publication No.: US4890192APublication Date: 1989-12-26
- Inventor: Lawrence N. Smith
- Applicant: Lawrence N. Smith
- Applicant Address: TX Austin
- Assignee: Microelectronics and Computer Technology Corporation
- Current Assignee: Microelectronics and Computer Technology Corporation
- Current Assignee Address: TX Austin
- Main IPC: H01G4/33
- IPC: H01G4/33 ; H01G4/38 ; H01L29/92 ; H05K1/16
Abstract:
A thin film capacitor having a top, middle and bottom plate forming two capacitors in series in which the middle plate is a plurality of isolated plates thereby forming a structure of a plurality of two capacitors in series which are all connected in parallel. The capacitor may be integrated into an electronic substrate. The capacitor may be formed by depositing films of the metal conductors and dielectrics and may be formed as an integral part of a semiconductor chip or interconnect substrate.
Public/Granted literature
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