发明授权
- 专利标题： Method for production of compound semicondutor devices
- 专利标题（中）： 复合半导体器件的生产方法
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申请号： US175704申请日： 1988-03-31
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公开(公告)号： US4902635A公开(公告)日： 1990-02-20
- 发明人: Yoshinori Imamura , Masaru Miyazaki , Akihisa Terano , Nobutoshi Matsunaga , Hiroshi Yanazawa
- 申请人： Yoshinori Imamura , Masaru Miyazaki , Akihisa Terano , Nobutoshi Matsunaga , Hiroshi Yanazawa
- 申请人地址： JPX Tokyo
- 专利权人： The Agency of Industrial Science and Technology
- 当前专利权人： The Agency of Industrial Science and Technology
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX62-318541 19871218
- 主分类号： H01L21/338
- IPC分类号： H01L21/338 ; H01L21/768 ; H01L21/8252 ; H01L23/532 ; H01L29/417 ; H01L29/423 ; H01L29/812
摘要：
This invention is related to the method for production of semiconductor devices suitable for increasing the integration density of semiconductor integrated circuits, especially GaAs semiconductor IC devices.This invention uses no third wiring metal, contact hole or through hole for connection between the Schottky junction and ohmic electrodes formed on the GaAs semiconductor substrate required in the conventional technology, but provides the method for direct connection between the two electrodes stated above by means of vapor deposition, ion implantation, sputtering, CVD, plasma CVD, dry etching and wet etching.Since the application of this invention enables the two electrodes stated above to be directly connected with high yield, the element area at the connecting portion can be reduced to less than half as compared with the same required in the conventional method, the total element area can be reduced greatly.
公开/授权文献
- US5411134A Container for compact disks and the like 公开/授权日：1995-05-02
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