摘要:
This invention is related to the method for production of semiconductor devices suitable for increasing the integration density of semiconductor integrated circuits, especially GaAs semiconductor IC devices.This invention uses no third wiring metal, contact hole or through hole for connection between the Schottky junction and ohmic electrodes formed on the GaAs semiconductor substrate required in the conventional technology, but provides the method for direct connection between the two electrodes stated above by means of vapor deposition, ion implantation, sputtering, CVD, plasma CVD, dry etching and wet etching.Since the application of this invention enables the two electrodes stated above to be directly connected with high yield, the element area at the connecting portion can be reduced to less than half as compared with the same required in the conventional method, the total element area can be reduced greatly.
摘要:
The power conversion apparatus includes electronic components constituting a power conversion circuit, a cooler for cooling at least some of the electronic components, and a case housing the electronic components and the cooler. The at least some of the electronic components and the cooler are fixed to and integrated in a frame as an internal unit . The internal unit including therein the semiconductor modules also includes a control circuit board fitted to board fixing sections formed in the frame so as to project from the frame in the height direction perpendicular to the plane of the frame. Each of the board fixing sections has a board abutment surface at a position closer to the frame than the tips of control terminals of the semiconductor modules formed so as to project in the height direction.
摘要:
A bimorph switch electrically connecting a traveling contact and a fixed contact. The switch comprises a substrate having a front face, a rear face, and a through hole penetrating from the front face to the rear face; a fixed contact extending from an edge portion of the aperture of the through hole towards the inside of the aperture; and a bimorph section holding the traveling contact at a position facing the aperture and driving the traveling contact. One end of the bimorph section may be formed on a silicon oxide layer formed on a front face of the substrate.
摘要:
A condenser, a coil and a thin-thickness integrated circuit are placed between an upper cover sheet and a lower cover sheet, and adhesive is filled into the space between them, whereby a card is fabricated. Because the condenser, the coil and the thin-thickness integrated circuit are extremely thin, the resulting semiconductor device is highly resistant to bending and highly reliable at a low cost.
摘要:
An information recording method is provided, in which a p- or n-type semiconductor wafer is irradiated with an energetic particle beam such as an electron beam thereby to control, e.g., decreased or increased generation of the surface photovoltage at the irradiated area so that information may be recorded on the wafer.
摘要:
The power conversion apparatus includes electronic components constituting a power conversion circuit, a cooler for cooling at least some of the electronic components, and a case housing the electronic components and the cooler. The at least some of the electronic components and the cooler are fixed to and integrated in a frame as an internal unit . The internal unit including therein the semiconductor modules also includes a control circuit board fitted to board fixing sections formed in the frame so as to project from the frame in the height direction perpendicular to the plane of the frame. Each of the board fixing sections has a board abutment surface at a position closer to the frame than the tips of control terminals of the semiconductor modules formed so as to project in the height direction.
摘要:
A hetero junction bipolar transistor provides a contact area an area between an emitter (or collector) electrode and a wiring formed on the electrode that is larger than that of the emitter (or collector). A variation in voltage applied to an emitter (or collector)-base junctions is prevented and a stable operation of the transistor is attained. In addition, when an etching operation is carried out, an insulation film is formed on a side part of a mask. A patterning of the emitter (or collector) is then carried out and thus an emitter (or collector) having a size approximate to that of the mask is formed.
摘要:
A device for automatically stripping and delivering a fore end of a paper roll, in which the fore end of the paper roll, which is wound on a bobbin, is gripped by both a stripping lever and a pawl member when the paper roll fore end gets on the fore end portion of the stripping lever, the stripping lever being capable of coming into contact with and moving away from the paper roll, the pawl member being mounted on a fore end side of the stripping member so as to be capable of coming into contact with and moving away from the fore end of the stripping member. The fore end of the paper roll after being stripped and drawn out by both the stripping member and the pawl member is sucked and delivered to the next step.
摘要:
An automatic wrapping material change-over apparatus having a plurality of bobbins each with a wrapping material wound thereon and functioning to change-over from one bobbin from which the wrapping material is being drawn out, to another bobbin and cut simultaneously the wrapping material from the one bobbin and that from the another bobbin upon detection of a mark register between both wrapping materials, in which the thus-cut end of the wrapping material from the another bobbin follows the thus-cut end of the wrapping material from the one bobbin.