发明授权
US4903093A Semiconductor integrated circuit device double isolated CMOS input
protection resistor
失效
半导体集成电路器件双隔离CMOS输入保护电阻
- 专利标题： Semiconductor integrated circuit device double isolated CMOS input protection resistor
- 专利标题（中）： 半导体集成电路器件双隔离CMOS输入保护电阻
-
申请号： US199671申请日： 1988-05-27
-
公开(公告)号： US4903093A公开(公告)日： 1990-02-20
- 发明人: Akira Ide , Koichi Motohashi , Masanori Odaka , Nobuo Tamba
- 申请人： Akira Ide , Koichi Motohashi , Masanori Odaka , Nobuo Tamba
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX62-142027 19870605
- 主分类号： H01L21/8249
- IPC分类号： H01L21/8249 ; H01L21/331 ; H01L27/02 ; H01L27/06 ; H01L27/10 ; H01L27/105 ; H01L29/73 ; H01L29/732
摘要：
In a semiconductor integrated circuit device, input protective elements have current limiting resistors which are diffused resistors of a second conductivity type formed in a first semiconductor region of a first conductivity type isolated electrically by a second semiconductor region of the second conductivity type, with the first conductivity type semiconductor region being in a floating state electrically. The input protective elements create less leak current and have high electrostatic durability.
公开/授权文献
- US5999447A Non-volatile electrically erasable and programmable memory 公开/授权日：1999-12-07
信息查询
IPC分类:
