发明授权
- 专利标题: Process of vapor growth of gallium nitride and its apparatus
- 专利标题(中): 氮化镓气相生长工艺及其装置
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申请号: US148633申请日: 1988-01-26
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公开(公告)号: US4911102A公开(公告)日: 1990-03-27
- 发明人: Katsuhide Manabe , Nobuo Okazaki , Isamu Akazaki , Kazumasa Hiramatsu , Hiroshi Amano
- 申请人: Katsuhide Manabe , Nobuo Okazaki , Isamu Akazaki , Kazumasa Hiramatsu , Hiroshi Amano
- 申请人地址: JPX Nishikasuga JPX Nagoya
- 专利权人: Toyoda Gosei Co., Ltd.,Nagoya University
- 当前专利权人: Toyoda Gosei Co., Ltd.,Nagoya University
- 当前专利权人地址: JPX Nishikasuga JPX Nagoya
- 优先权: JPX62-21119 19870131; JPX62-21120 19870131; JPX62-21122 19870131; JPX62-21123 19870131; JPX62-21125 19870131
- 主分类号: C23C16/44
- IPC分类号: C23C16/44 ; C23C16/455 ; C30B25/02 ; C30B25/14 ; H01L21/20 ; H01L21/205 ; H01L33/00
摘要:
A process and apparatus, whereby in the process of vapor growth of a gallium nitride group semiconductor (Al.sub.x Ga.sub.1-x N; inclusive of x=0) thin film using an organometallic compound gas, a reactant gas which grows Al.sub.x Ga.sub.1-x N and a reactant gas containing a doping element are separately introduced near to a susceptor and mixed in the vicinity of a substrate held by the susceptor to grow an I-type Al.sub.x Ga.sub.1-x N thin film, are disclosed. Also, a process of vapor growth and apparatus having a mixing tube and a process and apparatus for inclining the susceptor relative to the reactant gas flow are disclosed. Moreover, a process and apparatus, whereby the Al.sub.x Ga.sub.1-x N thin film is subjected to the crystal growth using a plasma of the reactant gas under reduced pressure, under the irradiation of ultraviolet rays or laser beams, are disclosed.
公开/授权文献
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