公开(公告)号：US4911102A

公开(公告)日：1990-03-27

申请号：US148633

申请日：1988-01-26

申请人： Katsuhide Manabe ,  Nobuo Okazaki ,  Isamu Akazaki ,  Kazumasa Hiramatsu ,  Hiroshi Amano

发明人： Katsuhide Manabe ,  Nobuo Okazaki ,  Isamu Akazaki ,  Kazumasa Hiramatsu ,  Hiroshi Amano

IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/02 ,  C30B25/14 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00

CPC分类号： C23C16/45512 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45576 ,  C30B25/02 ,  C30B25/14 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/0008 ,  H01L33/007

摘要： A process and apparatus, whereby in the process of vapor growth of a gallium nitride group semiconductor (Al.sub.x Ga.sub.1-x N; inclusive of x=0) thin film using an organometallic compound gas, a reactant gas which grows Al.sub.x Ga.sub.1-x N and a reactant gas containing a doping element are separately introduced near to a susceptor and mixed in the vicinity of a substrate held by the susceptor to grow an I-type Al.sub.x Ga.sub.1-x N thin film, are disclosed. Also, a process of vapor growth and apparatus having a mixing tube and a process and apparatus for inclining the susceptor relative to the reactant gas flow are disclosed. Moreover, a process and apparatus, whereby the Al.sub.x Ga.sub.1-x N thin film is subjected to the crystal growth using a plasma of the reactant gas under reduced pressure, under the irradiation of ultraviolet rays or laser beams, are disclosed.

摘要翻译： 一种工艺和装置，其中在使用有机金属化合物气体的氮化镓族半导体（Al x Ga 1-x N，包括x = 0）薄膜的气相生长过程中，生长Al x Ga 1-x N的反应气体和含有 在基座附近分别引入掺杂元素，并在由基座保持的基板附近混合，以生长I型Al x Ga 1-x N薄膜。 此外，公开了一种气相生长方法和具有混合管的装置和用于使基座相对于反应气体流动倾斜的方法和装置。 此外，公开了在紫外线或激光束的照射下，使用反应气体的等离子体在减压下对Al x Ga 1-x N薄膜进行晶体生长的方法和装置。

公开(公告)号：US5218216A

公开(公告)日：1993-06-08

申请号：US811899

申请日：1991-12-20

申请人： Katsuhide Manabe ,  Nobuo Okazaki ,  Isamu Akasaki ,  Kazumasa Hiramatsu ,  Hiroshi Amano

发明人： Katsuhide Manabe ,  Nobuo Okazaki ,  Isamu Akasaki ,  Kazumasa Hiramatsu ,  Hiroshi Amano

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L33/32 ,  H01L33/40

CPC分类号： H01L33/40 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02661 ,  H01L33/0008 ,  H01L33/007 ,  H01L33/32

摘要： A thin film of SiO.sub.2 is patterned on an N layer consisting of N-type Al.sub.x Ga.sub.1-x N (inclusive of x=0). Next, I-type Al.sub.x Ga.sub.1-x N (inclusive of x=0) is selectively grown and the portion on the N layer grows into an I-layer consisting an active layer of a light emitting diode, and that on the SiO.sub.2 thin film grows into a conductive layer. Electrodes are formed on the I-layer and conductive layer to constitute the light emitting diode. Also, on the surface a ({1120}) of a sapphire substrate, a buffer layer consisting of aluminum nitride is formed, onto which a gallium nitride group semiconductor is formed.

摘要翻译： 在由N型Al x Ga 1-x N（包括x = 0）组成的N层上图案化SiO 2薄膜。 接下来，选择性地生长I型Al x Ga 1-x N（包括x = 0），并且N层上的部分生长成由发光二极管的有源层组成的I层，并且SiO 2薄膜上的部分生长成 导电层。 在I层和导电层上形成电极以构成发光二极管。 此外，在蓝宝石衬底的表面a（{11＆upbar＆20}）上形成由氮化铝构成的缓冲层，形成氮化镓族半导体。

公开(公告)号：US5122845A

公开(公告)日：1992-06-16

申请号：US484213

申请日：1990-02-26

申请人： Katsuhide Manabe ,  Hisaki Kato ,  Isamu Akasaki ,  Kazumasa Hiramatsu ,  Hiroshi Amano

发明人： Katsuhide Manabe ,  Hisaki Kato ,  Isamu Akasaki ,  Kazumasa Hiramatsu ,  Hiroshi Amano

IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/86 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01L33/40

CPC分类号： H01L33/32 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16 ,  H01L33/40

摘要： A substrate for producing a gallium nitride compound-semiconductor (Al.su Ga.sub.1-x N; X=0 inclusive) device in vapor phase on a sapphire substrate using gaseous organometallic compound, and a also blue light emitting diode produced by using the substrate. The buffer layer comprising aluminium nitride (AlN) and having a crystal structure where microcrystal or polycrystal is mixed in amorphous state, is formed on the sapphire substrate. The buffer layer is formed at a growth temperature of 380.degree. to 800.degree. C. to have a thickness of 100 to 500 .ANG.. Further, on the buffer layer is formed the layer of gallium nitride compound-semiconductor (Al.sub.x Ga.sub.1-x N; X=0 inclusive). The layer of gallium nitride compound-semiconductor (Al.sub.x Ga.sub.1-x N; X=0 inclusive) comprising at least two layers having different conductive types and being sequentially layered on the buffer layer, functions as a light emitting layer. The existence of the buffer layer having the aforementioned structure greatly contributes on the improved high-quality single crystal of the gallium nitride compound-semiconductor. On the other hand, the blue light emitting property is also improved due to the increase of the quality.

摘要翻译： 用于使用气态有机金属化合物在蓝宝石衬底上制造氮化镓化合物半导体（Al x Ga 1-x N; X = 0）的基板，以及通过使用该衬底制造的蓝色发光二极管。 在蓝宝石衬底上形成包含氮化铝（AlN）并且具有以非晶态混合微晶或多晶体的晶体结构的缓冲层。 缓冲层在380〜800℃的生长温度下形成，厚度为100〜500。 此外，在缓冲层上形成氮化镓化合物半导体层（Al x Ga 1-x N; X = 0）。 包含至少两层具有不同导电类型并依次层叠在缓冲层上的氮化镓化合物半导体层（Al x Ga 1-x N; X = 0）包括层，用作发光层。 具有上述结构的缓冲层的存在大大有助于改进的氮化镓化合物半导体的高质量单晶。 另一方面，由于质量的提高，蓝色发光特性也得到改善。

公开(公告)号：US5247533A

公开(公告)日：1993-09-21

申请号：US812913

申请日：1991-12-26

申请人： Nobuo Okazaki ,  Katsuhide Manabe ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Nobuo Okazaki ,  Katsuhide Manabe ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/14 ,  H01L33/32 ,  H01L33/34 ,  H01L33/38 ,  H01S5/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01L33/32 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/04 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/3202 ,  H01S5/3211

摘要： A gallium nitride group compound semiconductor laser diode includes at least one pn junction layer disposed between an n-type layer and a p-type layer. The n-type layer is formed from a gallium nitride group compound semiconductor material defined by the composition equation (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N (where 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1). The p-type layer, doped with an acceptor impurity, is obtained by electron beam irradiating a gallium nitride group compound semiconductor material defined by the composition equation (Al.sub.x' Ga.sub.1-x').sub.y' In.sub.1-y' N (where 0.ltoreq.x'.ltoreq.1, 0.ltoreq.y'.ltoreq.1, x=x' or x.noteq.x', and, y=y' or y.noteq.y'). The improved gallium nitride group semiconductor laser diode of the present invention is found to emit light in the visible short wavelength spectrum of light which includes the blue, violet and ultraviolet regions.

摘要翻译： 氮化镓族化合物半导体激光二极管包括设置在n型层和p型层之间的至少一个pn结层。 n型层由由组成式（Al x Ga 1-x）y In 1-y N（其中0≤x≤1和0≤y≤1）限定的氮化镓族化合物半导体材料形成， 。 掺杂有受主杂质的p型层通过电子束照射由组成式（Al x Ga 1-x'）y'In 1-y'N（其中0 1）定义的氮化镓族化合物半导体材料而获得， = x'

公开(公告)号：US5496766A

公开(公告)日：1996-03-05

申请号：US411467

申请日：1995-03-28

申请人： Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Tanaka ,  Teruo Tohma ,  Katsuhide Manabe

发明人： Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Tanaka ,  Teruo Tohma ,  Katsuhide Manabe

IPC分类号： H01L33/12 ,  H01L33/32 ,  H01L33/40 ,  H01S5/00 ,  H01S5/323 ,  H01L21/20

CPC分类号： H01L33/325 ,  H01S5/32341

摘要： Disclosure is a process for producing a luminous element of III-group nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a II-group element is added, comprising the steps of forming a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a II-group element is added; irradiating a low energy electron beam onto a topmost surface of the crystal layer to reform only the crystal layer; forming a thin film for absorbing optical energy on the topmost surface of the crystal layer; and pulse-heating the thin film for absorbing optical energy by heating means to reform only the crystal layer, thereby to produce a bluish green, blue or UV light emitting diode or a semiconductor laser diode with a high precision color purity.

摘要翻译： 公开是一种用于制造具有晶体层（Al x Ga 1-x）1-y In y N（0≤x≤1,0≤y≤1）的III族氮化物半导体的发光元件的方法， 添加II族元素，其中包括以下步骤：形成II-型元素的晶体层（Al x Ga 1-x）1-y In y N（0≤x≤1,0≤y≤1） 添加组元素; 将低能电子束照射到晶体层的最上表面，仅仅重结晶层; 在所述晶体层的最上表面上形成用于吸收光能的薄膜; 并且通过加热装置对用于吸收光能的薄膜进行脉冲加热，以仅仅重结晶层，从而产生具有高精度色纯度的蓝绿色，蓝色或UV发光二极管或半导体激光二极管。

公开(公告)号：US5389571A

公开(公告)日：1995-02-14

申请号：US46960

申请日：1993-04-16

申请人： Tetsuya Takeuchi ,  Hiroshi Amano ,  Isamu Akasaki ,  Atsushi Watanabe ,  Katsuhide Manabe

发明人： Tetsuya Takeuchi ,  Hiroshi Amano ,  Isamu Akasaki ,  Atsushi Watanabe ,  Katsuhide Manabe

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L29/20 ,  H01L29/201 ,  H01L33/00 ,  H01L33/32 ,  H01L33/34 ,  H01L33/40 ,  H01S5/02 ,  H01S5/323

CPC分类号： H01L33/32 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/201 ,  H01L33/007 ,  H01L29/2003 ,  Y10S148/065 ,  Y10S148/113 ,  Y10S438/933

摘要： Disclosed are a gallium nitride type semiconductor device that has a single crystal of (Ga.sub.1-x Al.sub.x).sub.1-y In.sub.y N, which suppresses the occurrence of crystal defects and thus has very high crystallization and considerably excellent flatness, and a method of fabricating the same. The gallium nitride type semiconductor device comprises a silicon substrate, an intermediate layer consisting of a compound containing at least aluminum and nitrogen and formed on the silicon substrate, and a crystal layer of (Ga.sub.1-x Al.sub.x).sub.1-y In.sub.y N (0.ltoreq.x.gtoreq.1, 0.ltoreq.y.ltoreq.1, excluding the case of x=1 and y=0). According to the method of fabricating a gallium nitride base semiconductor device, a silicon single crystal substrate is kept at a temperature of 400.degree. to 1300.degree. C. and is held in the atmosphere where a metaloganic compound containing at least aluminum and a nitrogen-containing compound are present to form a thin intermediate layer containing at least aluminum and nitrogen on a part or the entirety of the surface of the single crystal substrate, and then at least one layer or multiple layers of a single crystal of (Ga.sub.1-x Al.sub.x).sub. 1-y In.sub.y N are formed on the intermediate layer.

摘要翻译： 公开了具有（Ga1-xAlx）1-yInyN的单晶的氮化镓型半导体器件及其制造方法，其抑制晶体缺陷的发生，因此具有非常高的结晶度和相当优异的平坦度。 氮化镓型半导体器件包括硅衬底，由至少包含铝和氮并且形成在硅衬底上的化合物组成的中间层和（Ga1-xAlx）1-yInyN（0≤x≤1）的晶体层 > / = 1，0

公开(公告)号：US5239188A

公开(公告)日：1993-08-24

申请号：US971208

申请日：1992-11-04

申请人： Tetsuya Takeuchi ,  Hiroshi Amano ,  Isamu Akasaki ,  Atsushi Watanabe ,  Katsuhide Manabe

发明人： Tetsuya Takeuchi ,  Hiroshi Amano ,  Isamu Akasaki ,  Atsushi Watanabe ,  Katsuhide Manabe

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L29/20 ,  H01L29/201 ,  H01L33/00 ,  H01L33/32 ,  H01L33/34 ,  H01L33/40 ,  H01S5/02 ,  H01S5/323

CPC分类号： H01L33/32 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/201 ,  H01L33/007 ,  H01L29/2003 ,  Y10S148/065 ,  Y10S148/113 ,  Y10S438/933

摘要： Disclosed are a gallium nitride type semiconductor device that has a single crystal of (Ga.sub.l-x Al.sub.x).sub.l-y In.sub.y N, which suppresses the occurrence of crystal defects and thus has very high crystallization and considerably excellent flatness, and a method of fabricating the same. The gallium nitride type semiconductor device comprises a silicon substrate, an intermediate layer consisting of a compound containing at least aluminum and nitrogen and formed on the silicon substrate, and a crystal layer of (Ga.sub.l-x Al.sub.x).sub.l-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, excluding the case of x=1 and y=0). According to the method of fabricating a gallium nitride base semiconductor device, a silicon single crystal substrate is kept at a temperature of 400 to 1300.degree. C. and is held in the atmosphere where a metaloganic compound containing at least aluminum and a nitrogen-containing compound are present to form a thin intermediate layer containing at least aluminum and nitrogen on a part or the entirety of the surface of the single crystal substrate, and then at least one layer or multiple layers of a single crystal of (Ga.sub.l- x Al.sub.x).sub.l-y In.sub.y N are formed on the intermediate layer.

公开(公告)号：US5905276A

公开(公告)日：1999-05-18

申请号：US968896

申请日：1997-11-06

申请人： Katsuhide Manabe ,  Masahiro Kotaki ,  Hisaki Kato ,  Michinari Sassa ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Katsuhide Manabe ,  Masahiro Kotaki ,  Hisaki Kato ,  Michinari Sassa ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： H01L33/08 ,  H01L33/12 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/325

摘要： Disclosed is a light-emitting semiconductor device which comprises an N-layer of N-type nitrogen-Group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0, a P-layer of P-type nitrogen-Group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0 and a Zn doped semi-insulating I-layer of nitrogen-Group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0. The semi-insulating I-layer has a 20 to 3000 .ANG. thickness and can emit light in the range of 485 to 490 nm. By employing the I-layer, the light-emitting diode as a whole can emit light in the range of 450 to 480 nm.

摘要翻译： 公开了一种发光半导体器件，其包括满足式Al x Ga y In 1-x-y N的N型N型氮 - III族化合物半导体的N层，包括x = 0，y = 0和x = y = 0，a 满足公式Al x Ga y In 1-x-y N的P型氮 - III族化合物半导体的P层，包括x = 0，y = 0和x = y = 0，以及Zn掺杂的半绝缘I层， 满足公式Al x Ga y In 1-x-y N的III族化合物半导体，包括x = 0，y = 0和x = y = 0。 半绝缘I层的厚度为20至3000，可以发射485至490nm的光。 通过采用I层，发光二极管整体可发射450〜480nm的光。

公开(公告)号：US5620557A

公开(公告)日：1997-04-15

申请号：US494846

申请日：1995-06-26

申请人： Katsuhide Manabe ,  Masayoshi Koike ,  Hisaki Kato ,  Norikatsu Koide ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Katsuhide Manabe ,  Masayoshi Koike ,  Hisaki Kato ,  Norikatsu Koide ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： C30B25/02 ,  H01L33/32 ,  H01L21/00

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L33/007 ,  H01L33/0075 ,  Y10S117/915

摘要： A method of manufacturing two sapphireless layers (3a, 3b) at one time made of Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0, and a LED (10) utilizing one of the semiconductor layers (3a, 3b) as a substrate (3) includes the steps of forming two zinc oxide (ZnO) intermediate layers (2a, 2b) on each side of a sapphire substrate (1), forming two Group III nitride compound semiconductor layers (3a, 3b) satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0, each laminated on each of the intermediate ZnO layers (2a, 2b), and separating the intermediate ZnO layers (2a, 2b) from the sapphire substrate (1) by etching with an etching liquid only for the ZnO layers (2a, 2b). At least one of the so-obtained Group III nitride compound layers is provided with n and p MOVPE layers (4, 5) formed thereon with electrodes (6, 7) on opposite sides to form an LED emitting in the 450 nm region and having a low device resistance.

摘要翻译： 一次由满足公式Al x Ga y In 1-x-y N的III族氮化物化合物半导体制造两个蓝宝石层（3a，3b）的方法，包括x = 0，y = 0和x = y = 0，以及 利用半导体层（3a，3b）之一作为基板（3）的LED（10）包括在蓝宝石基板（1）的每一侧上形成两个氧化锌（ZnO）中间层（2a，2b）的步骤， 形成满足式Al x Ga y In 1-x-y N的两个III族氮化物化合物半导体层（3a，3b），包括x = 0，y = 0和x = y = 0，各层叠在每个中间ZnO层 ，2b），并且通过仅用于ZnO层（2a，2b）的蚀刻液蚀刻从中分离出中间ZnO层（2a，2b）和蓝宝石衬底（1）。 如此获得的III族氮化物化合物层中的至少一个设置有在其上形成有电极（6,7）的相对侧上的n和p个MOVPE层（4,5），以形成在450nm区域中发射的LED，并且具有 器件电阻低。

公开(公告)号：US5583879A

公开(公告)日：1996-12-10

申请号：US423946

申请日：1995-04-19

申请人： Shiro Yamazaki ,  Norikatsu Koide ,  Katsuhide Manabe ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Shiro Yamazaki ,  Norikatsu Koide ,  Katsuhide Manabe ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： H01S5/30 ,  H01S5/323 ,  H01S3/18 ,  H01L3/00

CPC分类号： H01S5/32341 ,  H01S5/3086

摘要： A gallium nitride group compound semiconductor laser diode (10) satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1 comprises by a double hetero-junction structure sandwiching an active layer (5) between layers (4, 6) having wider band gaps than the active layer (5). The active layer (5) may comprise magnesium (Mg) doped p-type conductive gallium nitride group compound semiconductor satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1 . In another embodiment, the active layer (5) is doped with silicon (Si).

摘要翻译： 满足式（Al x Ga 1-x）y In 1-y N，包括0≤x≤1且0≤y≤1的氮化镓族化合物半导体激光二极管（10） 在具有比活性层（5）更宽的带隙的层（4,6）之间夹着有源层（5）的结结构结构。 有源层（5）可以包括满足式（Al x Ga 1-x）y In 1-y N的包含镁（Mg）的p型导电氮化镓族化合物半导体，包括0≤x≤1和0≤ y