公开(公告)号：US4911102A

公开(公告)日：1990-03-27

申请号：US148633

申请日：1988-01-26

申请人： Katsuhide Manabe ,  Nobuo Okazaki ,  Isamu Akazaki ,  Kazumasa Hiramatsu ,  Hiroshi Amano

发明人： Katsuhide Manabe ,  Nobuo Okazaki ,  Isamu Akazaki ,  Kazumasa Hiramatsu ,  Hiroshi Amano

IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/02 ,  C30B25/14 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00

CPC分类号： C23C16/45512 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45576 ,  C30B25/02 ,  C30B25/14 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/0008 ,  H01L33/007

摘要： A process and apparatus, whereby in the process of vapor growth of a gallium nitride group semiconductor (Al.sub.x Ga.sub.1-x N; inclusive of x=0) thin film using an organometallic compound gas, a reactant gas which grows Al.sub.x Ga.sub.1-x N and a reactant gas containing a doping element are separately introduced near to a susceptor and mixed in the vicinity of a substrate held by the susceptor to grow an I-type Al.sub.x Ga.sub.1-x N thin film, are disclosed. Also, a process of vapor growth and apparatus having a mixing tube and a process and apparatus for inclining the susceptor relative to the reactant gas flow are disclosed. Moreover, a process and apparatus, whereby the Al.sub.x Ga.sub.1-x N thin film is subjected to the crystal growth using a plasma of the reactant gas under reduced pressure, under the irradiation of ultraviolet rays or laser beams, are disclosed.

摘要翻译： 一种工艺和装置，其中在使用有机金属化合物气体的氮化镓族半导体（Al x Ga 1-x N，包括x = 0）薄膜的气相生长过程中，生长Al x Ga 1-x N的反应气体和含有 在基座附近分别引入掺杂元素，并在由基座保持的基板附近混合，以生长I型Al x Ga 1-x N薄膜。 此外，公开了一种气相生长方法和具有混合管的装置和用于使基座相对于反应气体流动倾斜的方法和装置。 此外，公开了在紫外线或激光束的照射下，使用反应气体的等离子体在减压下对Al x Ga 1-x N薄膜进行晶体生长的方法和装置。

公开(公告)号：US5218216A

公开(公告)日：1993-06-08

申请号：US811899

申请日：1991-12-20

申请人： Katsuhide Manabe ,  Nobuo Okazaki ,  Isamu Akasaki ,  Kazumasa Hiramatsu ,  Hiroshi Amano

发明人： Katsuhide Manabe ,  Nobuo Okazaki ,  Isamu Akasaki ,  Kazumasa Hiramatsu ,  Hiroshi Amano

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L33/32 ,  H01L33/40

CPC分类号： H01L33/40 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02661 ,  H01L33/0008 ,  H01L33/007 ,  H01L33/32

摘要： A thin film of SiO.sub.2 is patterned on an N layer consisting of N-type Al.sub.x Ga.sub.1-x N (inclusive of x=0). Next, I-type Al.sub.x Ga.sub.1-x N (inclusive of x=0) is selectively grown and the portion on the N layer grows into an I-layer consisting an active layer of a light emitting diode, and that on the SiO.sub.2 thin film grows into a conductive layer. Electrodes are formed on the I-layer and conductive layer to constitute the light emitting diode. Also, on the surface a ({1120}) of a sapphire substrate, a buffer layer consisting of aluminum nitride is formed, onto which a gallium nitride group semiconductor is formed.

摘要翻译： 在由N型Al x Ga 1-x N（包括x = 0）组成的N层上图案化SiO 2薄膜。 接下来，选择性地生长I型Al x Ga 1-x N（包括x = 0），并且N层上的部分生长成由发光二极管的有源层组成的I层，并且SiO 2薄膜上的部分生长成 导电层。 在I层和导电层上形成电极以构成发光二极管。 此外，在蓝宝石衬底的表面a（{11＆upbar＆20}）上形成由氮化铝构成的缓冲层，形成氮化镓族半导体。

公开(公告)号：US5122845A

公开(公告)日：1992-06-16

申请号：US484213

申请日：1990-02-26

申请人： Katsuhide Manabe ,  Hisaki Kato ,  Isamu Akasaki ,  Kazumasa Hiramatsu ,  Hiroshi Amano

发明人： Katsuhide Manabe ,  Hisaki Kato ,  Isamu Akasaki ,  Kazumasa Hiramatsu ,  Hiroshi Amano

IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/86 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01L33/40

CPC分类号： H01L33/32 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16 ,  H01L33/40

摘要： A substrate for producing a gallium nitride compound-semiconductor (Al.su Ga.sub.1-x N; X=0 inclusive) device in vapor phase on a sapphire substrate using gaseous organometallic compound, and a also blue light emitting diode produced by using the substrate. The buffer layer comprising aluminium nitride (AlN) and having a crystal structure where microcrystal or polycrystal is mixed in amorphous state, is formed on the sapphire substrate. The buffer layer is formed at a growth temperature of 380.degree. to 800.degree. C. to have a thickness of 100 to 500 .ANG.. Further, on the buffer layer is formed the layer of gallium nitride compound-semiconductor (Al.sub.x Ga.sub.1-x N; X=0 inclusive). The layer of gallium nitride compound-semiconductor (Al.sub.x Ga.sub.1-x N; X=0 inclusive) comprising at least two layers having different conductive types and being sequentially layered on the buffer layer, functions as a light emitting layer. The existence of the buffer layer having the aforementioned structure greatly contributes on the improved high-quality single crystal of the gallium nitride compound-semiconductor. On the other hand, the blue light emitting property is also improved due to the increase of the quality.

摘要翻译： 用于使用气态有机金属化合物在蓝宝石衬底上制造氮化镓化合物半导体（Al x Ga 1-x N; X = 0）的基板，以及通过使用该衬底制造的蓝色发光二极管。 在蓝宝石衬底上形成包含氮化铝（AlN）并且具有以非晶态混合微晶或多晶体的晶体结构的缓冲层。 缓冲层在380〜800℃的生长温度下形成，厚度为100〜500。 此外，在缓冲层上形成氮化镓化合物半导体层（Al x Ga 1-x N; X = 0）。 包含至少两层具有不同导电类型并依次层叠在缓冲层上的氮化镓化合物半导体层（Al x Ga 1-x N; X = 0）包括层，用作发光层。 具有上述结构的缓冲层的存在大大有助于改进的氮化镓化合物半导体的高质量单晶。 另一方面，由于质量的提高，蓝色发光特性也得到改善。

公开(公告)号：US5846844A

公开(公告)日：1998-12-08

申请号：US598134

申请日：1996-02-07

申请人： Isamu Akasaki ,  Hiroshi Amano ,  Kazumasa Hiramatsu ,  Theeradetch Detchprohm

发明人： Isamu Akasaki ,  Hiroshi Amano ,  Kazumasa Hiramatsu ,  Theeradetch Detchprohm

IPC分类号： H01L21/20 ,  H01L21/363 ,  H01L21/84 ,  H01L33/00

CPC分类号： H01L33/0075 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02664 ,  H01L21/84 ,  H01L33/007 ,  Y10S117/915 ,  Y10S148/065 ,  Y10S148/113 ,  Y10S148/135

摘要： A nitrogen-group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0, and a method for producing the same comprising the steps of forming a zinc oxide (ZnO) intermediate layer on a sapphire substrate, forming a nitrogen-group III semiconductor layer satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0 on the intermediate ZnO layer, and separating the intermediate ZnO layer by wet etching with an etching liquid only for the ZnO layer.

摘要翻译： 满足式Al x Ga y In 1-x-y N，包括x = 0，y = 0和x = y = 0的氮 - 基III族化合物半导体及其制造方法包括以下步骤：形成氧化锌（ZnO） 在中间ZnO层上形成满足式Al x Ga y In 1-x-y N的氮基III半导体层，包括x = 0，y = 0和x = y = 0，并分离中间体ZnO 通过仅用于ZnO层的蚀刻液进行湿法蚀刻。

公开(公告)号：US5370738A

公开(公告)日：1994-12-06

申请号：US12780

申请日：1993-02-03

申请人： Atsushi Watanabe ,  Hiroshi Amano ,  Kazumasa Hiramatsu ,  Isamu Akasaki

发明人： Atsushi Watanabe ,  Hiroshi Amano ,  Kazumasa Hiramatsu ,  Isamu Akasaki

IPC分类号： H01L21/205 ,  C23C16/455 ,  C30B25/14 ,  C23C16/00

CPC分类号： C30B25/14 ,  C23C16/455

摘要： A compound semiconductor vapor phase epitaxial device comprises a cylindrical reactor vessel, a plurality of flow channels disposed in the reactor vessel, a crystal substrate disposed in one of the flow channels, a plurality of gas supply pipes for respectively supplying gas containing element of compound to be grown on the crystal substrate and at least one slit or linearly arranged fine holes communicating adjacent two flow channels so as to extend in a direction normal to a direction of the gas flow to form a laminate layer flow consisting of two or more than two gases at an upstream portion of location of the crystal substrate.

摘要翻译： 化合物半导体气相外延装置包括圆柱形反应器容器，设置在反应器容器中的多个流动通道，设置在一个流动通道中的晶体基板，多个气体供应管道，用于将含有化合物的气体分别供应到 在晶体基板上生长至少一个狭缝或线性布置的细孔，其连通相邻的两个流动通道，以沿着与气流方向垂直的方向延伸，以形成由两个或多于两个气体组成的层压层流 在晶体基板的位置的上游部分。

公开(公告)号：US20060172512A1

公开(公告)日：2006-08-03

申请号：US10546983

申请日：2004-03-04

申请人： Kazumasa Hiramatsu ,  Hideto Miyake ,  Shinya Bohyama ,  Takayoshi Maeda ,  Yoshinobu Ono

发明人： Kazumasa Hiramatsu ,  Hideto Miyake ,  Shinya Bohyama ,  Takayoshi Maeda ,  Yoshinobu Ono

IPC分类号： H01L21/20

CPC分类号： H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647

摘要： The present invention relates to a method for producing an epitaxial substrate having a III-V group compound semiconductor crystal represented by the general formula InxGayAlzN (wherein, x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1) having reduced dislocation density, comprising a first step of covering with a mask made of a different material from the III-V group compound semiconductor so that only portions around points of the crystal constitute openings by using a III-V group compound semiconductor crystal having a plurality of projection shapes and a second step of growing the III-V group compound semiconductor crystal laterally by using the III-V group compound semiconductor crystal at the opening as a seed crystal. According to the present invention, an epitaxial substrate having a III-V group compound semiconductor crystal having low dislocation density and little warp is obtained.

摘要翻译： 本发明涉及一种用于制造具有由通式为III-V族化合物半导体晶体表示的外延基板的方法，该III-V族化合物半导体晶体由以下通式表示：＆lt; N（其中，x + y + z = 1,0 <= x <=1,0,0≤i≤1,0<= z <= 1）具有降低的位错密度，包括第一步覆盖 具有由与III-V族化合物半导体不同的材料制成的掩模，使得通过使用具有多个投影形状的III-V族化合物半导体晶体，仅使晶体周围的部分构成开口，第二步是使 III-V族化合物半导体晶体通过在开口处使用III-V族化合物半导体晶体作为晶种横向。 根据本发明，获得具有位错密度低且翘曲少的III-V族化合物半导体晶体的外延基板。

公开(公告)号：US08053811B2

公开(公告)日：2011-11-08

申请号：US11920563

申请日：2006-05-02

申请人： Kazumasa Hiramatsu ,  Hideto Miyake ,  Yoshihiko Tsuchida ,  Yoshinobu Ono ,  Naohiro Nishikawa

发明人： Kazumasa Hiramatsu ,  Hideto Miyake ,  Yoshihiko Tsuchida ,  Yoshinobu Ono ,  Naohiro Nishikawa

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01S2304/12

摘要： A group 3-5 nitride semiconductor multilayer substrate (1) and a method for manufacturing such substrate are provided. A semiconductor layer (12) is formed on a base substrate (11), and a mask (13) is formed on the semiconductor layer (12). Then, after forming a group 3-5 nitride semiconductor crystalline layer (14) by selective growing, the group 3-5 nitride semiconductor crystalline layer (14) and the base substrate (11) are separated. The crystallinity of the semiconductor layer (12) is lower than that of the group 3-5 nitride semiconductor crystalline layer (14).

摘要翻译： 提供3-5族氮化物半导体多层基板（1）及其制造方法。 半导体层（12）形成在基底（11）上，在半导体层（12）上形成掩模（13）。 然后，通过选择性生长形成3-5族氮化物半导体结晶层（14）后，分离3-5族氮化物半导体结晶层（14）和基底基板（11）。 半导体层（12）的结晶度低于3-5族氮化物半导体晶体层（14）的结晶度。

公开(公告)号：US06946308B2

公开(公告)日：2005-09-20

申请号：US10396565

申请日：2003-03-26

申请人： Kazumasa Hiramatsu ,  Hideto Miyake ,  Shinya Bohyama ,  Takayoshi Maeda ,  Yasushi Iyechika

发明人： Kazumasa Hiramatsu ,  Hideto Miyake ,  Shinya Bohyama ,  Takayoshi Maeda ,  Yasushi Iyechika

IPC分类号： C30B29/38 ,  C30B25/02 ,  H01L21/205 ,  H01L29/201 ,  H01L33/32 ,  H01L21/00 ,  H01L33/00

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： When a crystal layer of III-V Group nitride compound semiconductor is formed, a nitride compound semiconductor layer is first overlaid on a substrate to form a base layer and a III-V Group nitride compound semiconductor represented by the general formula InxGayAlzN (where 0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1) is epitaxially grown on the base layer by hydride vapor phase epitaxy at a deposition pressure of not lower than 800 Torr. By making the deposition pressure not lower than 800 Torr, the crystallinity of the III-V Group nitride compound semiconductor can be markedly improved and its defect density reduced.

摘要翻译： 当形成III-V族氮化物化合物半导体的晶体层时，首先将氮化物化合物半导体层重叠在基板上以形成基底层，并且由通式In x x表示的III-V族氮化物化合物半导体 （其中0≤x≤1,0<= y <=1,0,0≤z≤1，x + y + z = 1）在不低于800托的沉积压力下通过氢化物气相外延在基底层上外延生长。 通过使沉积压力不低于800托，III-V族氮化物化合物半导体的结晶度可以显着提高，并且其缺陷密度降低。

公开(公告)号：US06503610B2

公开(公告)日：2003-01-07

申请号：US09814875

申请日：2001-03-23

申请人： Kazumasa Hiramatsu ,  Hideto Miyake ,  Takayoshi Maeda ,  Yasushi Iyechika

发明人： Kazumasa Hiramatsu ,  Hideto Miyake ,  Takayoshi Maeda ,  Yasushi Iyechika

IPC分类号： C30B100

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/0066 ,  H01L33/007 ,  H01S2304/12 ,  Y10T428/24926

摘要： Provided is a method of producing a group III-V compound semiconductor having a low dislocation density without increasing the thickness of a re-grown layer, the method includes a re-growing process using a mask pattern, and threading dislocations in the re-grown layer are terminated by the voids formed on the pattern.

摘要翻译： 提供了一种在不增加再生长层的厚度的情况下生产具有低位错密度的III-V族化合物半导体的方法，该方法包括使用掩模图案的再生长过程，以及再生长中的穿孔位错 层被图案上形成的空隙终止。

公开(公告)号：US06225650B1

公开(公告)日：2001-05-01

申请号：US09046638

申请日：1998-03-24

申请人： Kazuyuki Tadatomo ,  Hiroaki Okagawa ,  Youichiro Ohuchi ,  Keiji Miyashita ,  Kazumasa Hiramatsu ,  Nobuhiko Sawaki ,  Katsunori Yahashi ,  Takumi Shibata

发明人： Kazuyuki Tadatomo ,  Hiroaki Okagawa ,  Youichiro Ohuchi ,  Keiji Miyashita ,  Kazumasa Hiramatsu ,  Nobuhiko Sawaki ,  Katsunori Yahashi ,  Takumi Shibata

IPC分类号： H01L310328

CPC分类号： H01L33/32 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02483 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/025 ,  H01S5/0213 ,  H01S5/22 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/12

摘要： A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density.

摘要翻译： 一种GaN基晶体基底构件，包括基底衬底，掩模层，部分地覆盖所述基底衬底的表面以产生掩模区域，以及生长在其上的覆盖掩模层的GaN组晶体层，其部分地直接接触 基底的非掩蔽区域，半导体元件的用途，其制造方法以及位错线的控制方法。 本发明的制造方法能够使位于掩模区域或非掩蔽区域以上的GaN族晶体层的一部分具有低的位错密度。