发明授权
- 专利标题: Apparatus for adjusting initial position of melt surface
- 专利标题(中): 用于调节熔体表面初始位置的装置
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申请号: US222438申请日: 1988-07-21
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公开(公告)号: US4915775A公开(公告)日: 1990-04-10
- 发明人: Nobuo Katsuoka , Yoshihiro Hirano , Munenori Tomita , Atsushi Ozaki
- 申请人: Nobuo Katsuoka , Yoshihiro Hirano , Munenori Tomita , Atsushi Ozaki
- 申请人地址: JPX Tokyo
- 专利权人: Shin-Etsu Handotai Company, Ltd.
- 当前专利权人: Shin-Etsu Handotai Company, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX62-181722 19870721
- 主分类号: C30B15/00
- IPC分类号: C30B15/00 ; C30B15/20 ; C30B15/26
摘要:
A melt-surface initial position adjusting apparatus which is suitable for use in a monocrystal growing system employing the Czochralski method to adjust the vertical position of the melt surface before the growing of a monocrystal. The apparatus can ensure a highly precise measurement of a crystal-diameter measuring device, thereby enabling a reduction in the costs of producing a monocrystal bar. Before the growing of a crystal, the vertical position (H) of the surface (16A) of a melt within a crucible is measured. The crucible is moved vertically on the basis of the measured value in such a manner as to maintain the distance (L) between the melt surface (16A) and an image sensor (28) for measuring the crystal diameter at a predetermined value.
公开/授权文献
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