公开(公告)号：US4915775A

公开(公告)日：1990-04-10

申请号：US222438

申请日：1988-07-21

申请人： Nobuo Katsuoka ,  Yoshihiro Hirano ,  Munenori Tomita ,  Atsushi Ozaki

发明人： Nobuo Katsuoka ,  Yoshihiro Hirano ,  Munenori Tomita ,  Atsushi Ozaki

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B15/26

CPC分类号： C30B15/26 ,  C30B15/20 ,  Y10T117/1008

摘要： A melt-surface initial position adjusting apparatus which is suitable for use in a monocrystal growing system employing the Czochralski method to adjust the vertical position of the melt surface before the growing of a monocrystal. The apparatus can ensure a highly precise measurement of a crystal-diameter measuring device, thereby enabling a reduction in the costs of producing a monocrystal bar. Before the growing of a crystal, the vertical position (H) of the surface (16A) of a melt within a crucible is measured. The crucible is moved vertically on the basis of the measured value in such a manner as to maintain the distance (L) between the melt surface (16A) and an image sensor (28) for measuring the crystal diameter at a predetermined value.

公开(公告)号：US5584930A

公开(公告)日：1996-12-17

申请号：US487507

申请日：1995-06-07

申请人： Nobuo Katsuoka ,  Yoshihiro Hirano ,  Atsushi Ozaki ,  Masahiko Baba

发明人： Nobuo Katsuoka ,  Yoshihiro Hirano ,  Atsushi Ozaki ,  Masahiko Baba

IPC分类号： H01L21/66 ,  C30B15/20 ,  C30B15/28 ,  G01B11/10 ,  G01G9/00

CPC分类号： G01G9/00 ,  C30B15/28 ,  G01B11/105 ,  Y10T117/1004

摘要： A method for measuring a diameter of a single crystal ingot pulled up in a single crystal pulling apparatus comprising: calculating the weight of the pulled-up single crystal, calculating the descent amount of the melt surface relative to the crucible wall from the calculated pulled-up weight of the grown single crystal, and then either correcting the value of the ingot diameter actually measured by the optical sensor in response to the descent amount of the melt surface level or raising the crucible by an amount equal to the descent amount of the surface level.

摘要翻译： 一种用于测量在单晶拉制装置中拉起的单晶锭的直径的方法，包括：计算上拉单晶的重量，从计算的拉伸单元计算熔融表面相对于坩埚壁的下降量， 生长的单晶的重量，然后响应于熔体表面水平的下降量或者将坩埚升高等于表面下降量的量来校正由光学传感器实际测量的锭直径的值 水平。

公开(公告)号：US4973377A

公开(公告)日：1990-11-27

申请号：US174583

申请日：1988-03-28

申请人： Nobuo Katsuoka ,  Yoshihiro Hirano ,  Atsushi Ozaki

发明人： Nobuo Katsuoka ,  Yoshihiro Hirano ,  Atsushi Ozaki

IPC分类号： C30B15/20 ,  C30B15/26

CPC分类号： C30B15/26

摘要： Disclosed is a method of controlling the diameter of a single crystal produced by the Czochralski method. The diameter of a tapered portion of the single crystal is controlled by controlling the temperature of a melt in a crucible and the rotational speed of the crucible. The control range of the rotational speed of the crucible is made narrower as the diameter of the tapered portion approaches closer to that of a body portion, and the rotational speed is made constant while the body portion is grown.

公开(公告)号：US4794263A

公开(公告)日：1988-12-27

申请号：US109722

申请日：1987-10-19

申请人： Nobuo Katsuoka ,  Yoshihiro Hirano ,  Atsushi Ozaki ,  Masahiko Baba

发明人： Nobuo Katsuoka ,  Yoshihiro Hirano ,  Atsushi Ozaki ,  Masahiko Baba

IPC分类号： C30B15/26 ,  G01B11/08 ,  H01L21/18

CPC分类号： G01B11/08 ,  Y10T117/1004 ,  Y10T117/1012

摘要： An apparatus for measuring the diameter of a crystal in which an optical sensor scans along a sensing line which crosses at one point a luminous ring formed at the interface between a crystalline rod and a melt; the picture element position corresponding to a maximum luminance is discriminated when the optical sensor scans; the mean value of the picture element position is calculated over at least one revolution of the crystalline rod; and the diameter D of the crystalline rod at a portion thereof interfacing with the melt is calculated from the mean value and the level of the melt. Similarly, the minimum crystal diameter can be calculated by obtaining the picture element position corresponding to the minimum crystal diameter instead of obtaining the mean of the picture element position.

摘要翻译： 一种用于测量晶体直径的装置，其中光学传感器沿着在结晶棒和熔体之间的界面处形成的发光环的一个点处的感测线扫描; 当光学传感器扫描时，判别对应于最大亮度的像素位置; 在结晶棒的至少一圈上计算像素位置的平均值; 并且根据熔融物的平均值和水平计算结晶棒在与熔体相接合的部分的直径D. 类似地，可以通过获得与最小晶体直径相对应的像素位置而不是获得像素位置的平均值来计算最小晶体直径。

公开(公告)号：US5484326A

公开(公告)日：1996-01-16

申请号：US159501

申请日：1993-11-30

申请人： Yoshihiro Hirano ,  Atsushi Ozaki

发明人： Yoshihiro Hirano ,  Atsushi Ozaki

IPC分类号： B24B1/00 ,  B23D5/00 ,  B28D1/22 ,  B28D5/00 ,  B28D5/02 ,  C30B33/00 ,  G01N23/207 ,  H01L21/304 ,  B24B7/00

CPC分类号： B24B5/50 ,  B23D5/00 ,  C30B33/00

摘要： The cutting process is executed after the grinding process and for one semiconductor ingot, one grinding device and one inner diameter saw slicing machine are used to perform grinding process and cutting process respectively. During the grinding process, the entirety of the cylindrical body portion of the semiconductor ingot is cylindrically ground, a portion of the tail end is cylindrically ground, the orientation flat position is determined and an orientation flat is formed by surface grinding. During the cutting process the tail portion is cut off and a sample for lifetime measurement is taken and a wafer sample is cut off from the end of the cylindrical body portion on the tail side. The semiconductor ingot is reversed in the direction of the axis and the head portion of the semiconductor ingot is cut off and a wafer sample is cut off from the cylindrical body portion on the head side. Wafer samples are cut off from the end of the cylindrical body portion on the head side and from the middle portion of cylindrical body portion to divide the cylindrical body portion into two blocks.

摘要翻译： 在研磨过程之后执行切割过程，并且对于一个半导体锭，一个研磨装置和一个内径锯切机分别进行研磨处理和切割处理。 在研磨过程中，半导体锭的圆筒体部分的整体是圆柱形的，尾端的一部分是圆柱形的，确定取向平面位置，并通过表面研磨形成取向平面。 在切割过程中，尾部被切断，并且进行寿命测量的样品，并且从尾侧的圆柱体部分的端部切下晶片样品。 半导体锭在轴线方向上反转，并且半导体锭的头部被切断，并且晶片样品从头侧的圆柱形主体部分切除。 将晶片样品从头侧的圆筒体部分的端部和圆筒体部分的中间部分切除，以将圆柱体部分分成两个块。

公开(公告)号：US5370077A

公开(公告)日：1994-12-06

申请号：US933375

申请日：1992-08-24

申请人： Yoshihiro Hirano ,  Atsushi Ozaki ,  Masahiko Urano

发明人： Yoshihiro Hirano ,  Atsushi Ozaki ,  Masahiko Urano

IPC分类号： C30B15/20

CPC分类号： C30B15/20 ,  Y10T117/1004 ,  Y10T117/1032

摘要： The present invention provides control of single crystal growth after the recovery from power failure when controlling crystal growth in an automatic mode. A source voltage is supplied to a controller 70 through a no-break power supply 62. At the time of recovery from power failure, the controller continues the automatic operation mode with the same control output as that stored when power failure is detected (84, 85) if the power failure time t is t .ltoreq.t.sub.1 (for example, 1 second), switches the control mode to the manual control mode with the same control output as that stored when the power failure is detected (86, 87) if t.sub.1 t.sub.3.

摘要翻译： 本发明在控制自动模式下的晶体生长的同时，提供从断电恢复之后对单晶生长的控制。 源电压通过无断开电源62提供给控制器70.在电源故障恢复时，控制器以与检测到电源故障时存储的控制输出相同的控制输出继续自动运行模式（84， 85）如果电源故障时间t为t <= = t1（例如1秒），则以与检测到电源故障时存储的控制输出相同的控制输出将控制模式切换到手动控制模式（86,87） 如果t1 t3则向上移动坩埚16（90），将生长的晶体与熔体22分离。

公开(公告)号：US5405285A

公开(公告)日：1995-04-11

申请号：US187769

申请日：1994-01-28

申请人： Yoshihiro Hirano ,  Atsushi Ozaki

发明人： Yoshihiro Hirano ,  Atsushi Ozaki

IPC分类号： B23Q15/04 ,  B24B49/02 ,  B24B49/03 ,  C30B33/00 ,  G05B19/401 ,  G05B19/418 ,  H01L21/304 ,  B24B1/02

CPC分类号： C30B29/06 ,  B24B49/02 ,  C30B33/00 ,  G05B19/401 ,  G05B19/4189 ,  Y02P90/10 ,  Y02P90/28

摘要： The diameter, the orientation flat width/notch depth and the length of the block 10p are measured by the measuring devices 71a, 71b and 71c respectively and then the machining errors .DELTA.Dp, .DELTA.Wp and .DELTA.Lp in the measured values against the set values are calculated at the error calculation unit 833. Then .DELTA.Dp, .DELTA.Wp and .DELTA.Lp are stored in memory at the memory unit 834 in correspondence with the identification codes IDi and IDj of the grinding device 5i (i=1-N) and the cutting device 6j (j=1-M) that performed the machining. Then at the average value calculation unit 835, the average values of .DELTA.Dp and .DELTA.Wp for each of the grinding devices 51-5N and the average value of the .DELTA.Lp for each of the cutting devices 61-6M are calculated. The average values of .DELTA.Dp and .DELTA.Wp are supplied to the corresponding grinding device 5i as the diameter correction value and the width/depth correction value respectively and the average value of .DELTA.Lp is sent to the corresponding cutting device 6j as the length correction value from the transmission unit 836.

摘要翻译： 通过测量装置71a，71b和71c测量直径，取向平坦宽度/切口深度和块10p的长度，然后根据设定值测量测量值中的加工误差DELTA Dp，DELTA Wp和DELTA Lp 在误差计算单元833处计算。然后，DELTA Dp，DELTA Wp和DELTA Lp根据研磨装置5i（i = 1-N）的识别码IDi和IDj存储在存储器单元834的存储器中，并且 切割装置6j（j = 1-M）进行加工。 然后在平均值计算单元835中，计算每个研磨装置51-5N的DELTA Dp和DELTA Wp的平均值以及每个切割装置61-6M的DELTA Lp的平均值。 将DELTA Dp和DELTA Wp的平均值作为直径校正值和宽度/深度校正值分别提供给相应的研磨装置5i，并且将DELTA Lp的平均值发送到相应的切割装置6j作为长度校正值 从传输单元836。

公开(公告)号：US20060174819A1

公开(公告)日：2006-08-10

申请号：US10561865

申请日：2004-05-27

申请人： Nobuaki Mitamura ,  Tomohiko Ohta ,  Izumi Fusegawa ,  Masahiro Sakurada ,  Atsushi Ozaki

发明人： Nobuaki Mitamura ,  Tomohiko Ohta ,  Izumi Fusegawa ,  Masahiro Sakurada ,  Atsushi Ozaki

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B29/06 ,  C30B15/203

摘要： The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a chamber by Czochralski method, wherein a pulling condition is changed in a direction of the crystal growth axis during pulling the single crystal so that a margin of a pulling rate is always a predetermined value or more that the single crystal of which the whole plane in a radial direction is a defect-free region can be pulled. Thereby, there can be provided a method for producing a single crystal in which when a single crystal is produced by CZ method, the single crystal of which a whole plane in a radial direction is a defect-free region entirely in a direction of the crystal growth axis can be produced with stability.

摘要翻译： 本发明是一种单晶的制造方法，其中，通过Czochralski法从室内的原料熔融物中拉出单晶，其径向全平面为无缺陷区域，其中拉拔条件发生变化 拉伸单晶时的晶体生长轴的方向，使得拉伸速度的余量总是预先确定的值以上，使得整个平面在径向方向上的单晶是无缺陷区域。 因此，可以提供一种单晶的制造方法，其中当通过CZ法制造单晶时，其整个平面在径向方向上的无缺陷区域的单晶完全在晶体的方向上 生长轴可以稳定地生产。

公开(公告)号：US6027794A

公开(公告)日：2000-02-22

申请号：US999931

申请日：1997-08-08

申请人： Atsushi Ozaki ,  Hajime Kishi ,  Nobuyuki Odagiri ,  Hiroki Oosedo ,  Hiroaki Hinomiya

发明人： Atsushi Ozaki ,  Hajime Kishi ,  Nobuyuki Odagiri ,  Hiroki Oosedo ,  Hiroaki Hinomiya

IPC分类号： C08J5/24 ,  B32B27/04

CPC分类号： C08J5/24 ,  B29K2301/12 ,  Y10T428/249927 ,  Y10T428/249933 ,  Y10T428/249934 ,  Y10T428/24994 ,  Y10T428/249941 ,  Y10T428/249942 ,  Y10T428/249949 ,  Y10T428/24995 ,  Y10T442/2877 ,  Y10T442/2885 ,  Y10T442/2893 ,  Y10T442/291 ,  Y10T442/2918 ,  Y10T442/2951 ,  Y10T442/659

摘要： Prepregs, comprising the following components [A], [B] and [C], with the component [C] distributed near either or both of the surface layers without being regularly arranged.[A]: Long reinforcing fibers[B]: A matrix resin[C]: Long thermoplastic resin fibersThe prepregs of the present invention are tacky and drapable, and the composite materials obtained by heating and forming the prepregs are high in heat resistance, and very high in impact resistance and inter-layer toughness. Furthermore, the prepregs are easy to produce and high in their latitude in availability of materials.

摘要翻译： 包含以下组分[A]，[B]和[C]的预浸料，组分[C]分布在任何一个或两个表面层附近，而不经常排列。 [A]：长增强纤维[B]：基体树脂[C]：长的热塑性树脂纤维本发明的预浸料是粘性和可悬挂性的，通过加热和形成预浸料获得的复合材料的耐热性高， 并且耐冲击性和层间韧性非常高。 此外，预浸料容易生产，并且在材料可用性方面的纬度高。

公开(公告)号：US4985641A

公开(公告)日：1991-01-15

申请号：US315084

申请日：1989-02-24

申请人： Yasuji Nagayama ,  Atsushi Ozaki

发明人： Yasuji Nagayama ,  Atsushi Ozaki

IPC分类号： H01L21/822 ,  G11C11/401 ,  H01L21/82 ,  H01L27/04 ,  H01L27/118 ,  H03K17/22 ,  H03K19/173

CPC分类号： H03K17/223 ,  H01L27/118 ,  H03K17/22 ,  H01L2924/0002

摘要： A semiconductor integrated circuit device for setting operational functions dependent on connection of a first bonding pad (20) to a power supply includes switching transistors (Q11, Q40, Q52, Q32) for resetting an input signal line (30) connected to the first bonding pad to a predetermined potential when there is no power supply potential applied to the first bonding pad immediately after turn-on of an operation power supply, at least one inverter (Q3, Q4, Q13, Q14; Q42, Q43; Q50, Q51) responsive to the turn-on of the power supply for the device, for setting and maintaining the potential on the input signal line, and switching transistors (Q12; Q32; Q41; Q52) to be turned on in response to output of the inverter, for cutting off a current path from the power supply through the bonding pad to the input signal line.

摘要翻译： 用于根据第一接合焊盘（20）与电源的连接来设定操作功能的半导体集成电路装置包括用于复位与第一接合（20）连接的输入信号线（30）的开关晶体管（Q11，Q40，Q52，Q32） 至少一个逆变器（Q3，Q4，Q13，Q14; Q42，Q43; Q50，Q51），在操作电源接通后立即施加到第一焊盘上的电源电位， 响应于所述装置的电源的接通，用于设置和维持所述输入信号线上的电位，以及响应于所述逆变器的输出而导通的开关晶体管（Q12; Q32; Q41; Q52） 用于切断从电源通过接合焊盘到输入信号线的电流路径。