发明授权
US4931158A Deposition of films onto large area substrates using modified reactive
magnetron sputtering
失效
使用改进的反应磁控溅射将膜沉积到大面积基板上
- 专利标题： Deposition of films onto large area substrates using modified reactive magnetron sputtering
- 专利标题（中）： 使用改进的反应磁控溅射将膜沉积到大面积基板上
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申请号： US391740申请日： 1989-08-08
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公开(公告)号： US4931158A公开(公告)日： 1990-06-05
- 发明人: Rointan F. Bunshah , Chandra V. Deshpandey , Aziz A. Karim
- 申请人： Rointan F. Bunshah , Chandra V. Deshpandey , Aziz A. Karim
- 申请人地址： CA Oakland
- 专利权人： The Regents of the Univ. of Calif.
- 当前专利权人： The Regents of the Univ. of Calif.
- 当前专利权人地址： CA Oakland
- 主分类号： C23C14/00
- IPC分类号： C23C14/00 ; C23C14/35 ; H01J37/34
摘要：
An apparatus and process for reactive magnetron sputtering wherein film deposition is controlled by placing a grid located over the primary plasma and an auxiliary plasma adjacent to the substrate. The auxiliary plasma is produced using a positively biased d.c. probe. Control of the deposited film properties is provided by varying the d.c. probe voltage and open area of the wire grid.
公开/授权文献
- US5527999A Multilayer conductor for printed circuits 公开/授权日：1996-06-18
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