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1.发明授权Deposition of films onto large area substrates using modified reactive magnetron sputtering 失效使用改进的反应磁控溅射将膜沉积到大面积基板上
公开(公告)号：US4931158A
公开(公告)日：1990-06-05
申请号：US391740
申请日：1989-08-08
CPC分类号： C23C14/228 , C23C14/0068 , C23C14/35 , H01J37/3405
摘要： An apparatus and process for reactive magnetron sputtering wherein film deposition is controlled by placing a grid located over the primary plasma and an auxiliary plasma adjacent to the substrate. The auxiliary plasma is produced using a positively biased d.c. probe. Control of the deposited film properties is provided by varying the d.c. probe voltage and open area of the wire grid.
摘要翻译： 用于反应性磁控溅射的装置和方法，其中通过将位于主要等离子体上方的栅格和邻近基板的辅助等离子体放置来控制膜沉积。 辅助等离子体使用正偏压直流电压产生。 探测。 通过改变直流电压来提供沉积膜性质的控制。 探头电压和线栅的开放面积。
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公开(公告)号：US5055319A
公开(公告)日：1991-10-08
申请号：US503298
申请日：1990-04-02
CPC分类号： C23C14/0021 , C23C14/08
摘要： A process for depositing metal oxides by activated reactive evaporation (ARE) wherein deposition rate and film quality is controlled by reference to the relative amounts of metal and metal oxide present on the surface of the target material. The ratio of metal surface area to metal oxide surface area required to obtain high deposition rates is achieved by maintaining a relatively high concentration of oxygen in the reaction zone. This relative ratio of metal surface area to metal oxide surface area on target material provides a continuous indirect measure of film deposition rate and quality during the ARE process.
摘要翻译： 通过活性反应蒸发（ARE）沉积金属氧化物的方法，其中通过参照存在于目标材料表面上的金属和金属氧化物的相对量来控制沉积速率和膜质量。 通过在反应区中保持较高浓度的氧来实现获得高沉积速度所需的金属表面积与金属氧化物表面积的比例。 金属表面积与目标材料的金属氧化物表面积的相对比率提供了在ARE过程中膜沉积速率和质量的连续间接测量。
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3.发明授权公开(公告)号：US06535372B2
公开(公告)日：2003-03-18
申请号：US09885646
申请日：2001-06-20
IPC分类号： H01T2300
CPC分类号： H02N13/00 , Y10T279/23
摘要： Apparatus for retaining a workpiece in a semiconductor processing chamber and method for fabricating the same. In one embodiment, a method for fabricating the apparatus includes providing a controlled resistivity boron nitride (CRBN) plate. A conductive layer is disposed on a portion of a lower surface of the CRBN plate to form at least one chucking electrode. A layer of boron nitride powder is disposed on the conductive layer and the lower surface of the CRBN plate. The CRBN plate, the conductive layer, and the boron nitride powder are hot pressed together to form the apparatus. In a second embodiment, a conductive electrode layer is deposited on a portion of a lower surface of the CRBN plate. A layer of pyrolytic boron nitride is deposited on the conductive layer and the lower surface of the CRBN plate to form the apparatus.
摘要翻译： 用于在半导体处理室中保持工件的装置及其制造方法。 在一个实施例中，制造该装置的方法包括提供受控电阻率的氮化硼（CRBN）板。 导电层设置在CRBN板的下表面的一部分上以形成至少一个夹紧电极。 在导电层和CRBN板的下表面上设置一层氮化硼粉末。 将CRBN板，导电层和氮化硼粉末热压在一起以形成该装置。 在第二实施例中，导电电极层沉积在CRBN板的下表面的一部分上。 在导电层和CRBN板的下表面上沉积一层热解氮化硼以形成该装置。
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4.发明授权Deposition of films of cubic boron nitride and nitrides of other group III elements 失效沉积其他III族元素的立方氮化硼和氮化物的膜
公开(公告)号：US4714625A
公开(公告)日：1987-12-22
申请号：US764345
申请日：1985-08-12
CPC分类号： C23C14/0647 , C23C14/32
摘要： Process for producing cubic boron nitride films on a substrate by activated dissociation reduction-reaction. Boric acid in the condensed state is evaporated in a vacuum chamber from a resistance-heated evaporation source and ammonia gas is introduced into the chamber. The vapor of the boric acid and the molecules of the ammonia gas are ionized by a beam of low-energy electrons in the reaction zone between the resistance-heated evaporation source and the substrate. The ammonia gas reacts with the boric acid in a two-step process in which (1) the boric acid is reduced by the atomic hydrogen formed by the dissociation of ammonia, and (2) the resulting boron atoms react with the nitrogen atoms released by the dissociation of ammonia to form boron nitride which deposits as a film onthe substrate. This film has the cubic boron nitride structure and is ready for use without requiring post-deposition heat treatment.
摘要翻译： 通过活化的解离还原反应在衬底上生产立方氮化硼膜的方法。 冷凝态的硼酸在真空室中从电阻加热的蒸发源蒸发，并将氨气引入室中。 在电阻加热的蒸发源和衬底之间的反应区中，硼酸的蒸气和氨气的分子被低能电子束电离。 氨气与硼酸反应，其中（1）通过氨解离形成的原子氢还原硼酸，（2）所得硼原子与氮释放的氮原子反应， 氨的解离形成氮化硼，其作为膜沉积在基底上。 该膜具有立方氮化硼结构，并且可以使用而不需要后沉积热处理。
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