发明授权
- 专利标题： Semiconductor device having an isolation oxide film
- 专利标题（中）： 具有隔离氧化膜的半导体器件
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申请号： US266704申请日： 1988-11-03
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公开(公告)号： US4956692A公开(公告)日： 1990-09-11
- 发明人: Hiroji Ozaki , Masahiro Yoneda , Ikuo Ogoh , Yoshinori Okumura , Wataru Wakamiya , Masao Nagatomo
- 申请人： Hiroji Ozaki , Masahiro Yoneda , Ikuo Ogoh , Yoshinori Okumura , Wataru Wakamiya , Masao Nagatomo
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX62-282567 19871109
- 主分类号： H01L27/10
- IPC分类号： H01L27/10 ; H01L21/31 ; H01L21/334 ; H01L21/76 ; H01L21/762 ; H01L21/8242 ; H01L27/108
摘要：
Two trenches are formed at a predetermined distance on a main surface of a semiconductor substrate. An oxide film and a nitride film are successively formed on the main surface of the semiconductor including the inner surfaces of the trenches. After a resist is formed over the whole surface including the inner surfaces of the trenches, the resist is patterned to expose a portion of the nitride film on a side surface of each trench. The exposed portions of the nitride film are removed by using the patterned resist as a mask and thermal oxidation is applied. Then, an isolation oxide film is formed on a region between the trenches and an end of a bird's beak is located on a side surface of each trench and is connected to the oxide film formed in each trench.
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