发明授权
- 专利标题： Deposition of silicon oxide films using alkylsilane liquid sources
- 专利标题（中）： 使用烷基硅烷液体源沉积氧化硅膜
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申请号： US263487申请日： 1977-10-28
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公开(公告)号： US4981724A公开(公告)日： 1991-01-01
- 发明人: Arthur K. Hochberg , David L. O'Meara
- 申请人： Arthur K. Hochberg , David L. O'Meara
- 专利权人： AIR PRODUCTS AND CHEMICALS Inc ALLENTOWN PA 18195 A CORP OF,Air Products and Chemicals Inc
- 当前专利权人： AIR PRODUCTS AND CHEMICALS Inc ALLENTOWN PA 18195 A CORP OF,Air Products and Chemicals Inc
- 主分类号： C23C16/40
- IPC分类号： C23C16/40 ; H01L21/316
摘要：
A chemical vapor deposition process for depositing silicon dioxide comprising the steps of heating a substrate upon which deposition is desired to a temperature of from about 325.degree. C. to about 700.degree. C. in a vacuum having a pressure of from about 0.1 to about 1.5 torr, and introducing a silane selected from the group consisting of alkylsilane, arylsilane and araylkylsilane wherein the alkyl-, aryl- or aralkyl- moiety comprises from 2-6 carbons, and oxygen or carbon dioxide into the vacuum.
公开/授权文献
- US6083858A Sealing glass composition 公开/授权日：2000-07-04