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公开(公告)号：US5492736A
公开(公告)日：1996-02-20
申请号：US345158
申请日：1994-11-28
IPC分类号： C08L83/16 , C07F7/12 , C08L83/02 , C23C16/30 , C23C16/40 , C23C16/50 , H01L21/316 , H05H1/24
CPC分类号： H01L21/02131 , C23C16/401 , H01L21/02208 , H01L21/02274 , H01L21/31608
摘要： The present invention is a process for forming a fluorine-containing silicon oxide film on a substrate by plasma-enhanced chemical vapor deposition using a fluorinated silicon source of the formula: ##STR1## wherein at least one of R.sup.1 -R.sup.6 is fluorine and the remaining R groups are independently H, F, non-fluorinated-, partially fluorinated- or perfluorinated-: alkyl, alkenyl, alkynyl, aryl or benzylic groups, or C.sub.x H.sub.2x when one or more of R.sup.1, R.sup.2 or R.sup.3 is connected to R.sup.4, R.sup.5 or R.sup.6 through a bridging group C.sub.y H.sub.2y ; where x is 1-6, and y is 0-6; where M is Si or C and n is 0-6 and R.sup.7 is independently H, F, C.sub.z H.sub.2z+1 where z is 1-6 or C.sub.r H.sub.s F.sub.t where r is 1-6, s is (2r+1-t); t is 1 to (2r+1) . The present invention is also the film formed by that process and several novel source materials used in the process.
摘要翻译： 本发明是通过等离子体增强化学气相沉积在基底上形成含氟氧化硅膜的方法，该方法使用下列通式：ne的氟化硅源，其余的R基团独立地为H，F，非氟化 - 当R1，R2或R3中的一个或多个通过桥连基团CyHly连接到R 4，R 5或R 6时，部分氟化或全氟化 - ：烷基，烯基，炔基，芳基或苄基，或CxH2x; 其中x为1-6，y为0-6; 其中M为Si或C，n为0-6，且R7独立为H，F，CzH2z + 1，其中z为1-6或CrHsFt，其中r为1-6，s为（2r + 1-t）; t为1〜（2r + 1）。 本发明也是通过该方法形成的膜和用于该方法的几种新的原料。
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2.发明授权Deposition of tungsten films from mixtures of tungsten hexafluoride organohydrosilanes and hydrogen 失效从六氟化钨有机氢硅烷和氢气的混合物中沉积钨膜
公开(公告)号：US5433975A
公开(公告)日：1995-07-18
申请号：US116178
申请日：1993-09-02
CPC分类号： C23C16/14 , C23C16/08 , H01L21/28556
摘要： A method of depositing tungsten films comprising heating a substrate to a temperature above 200.degree. C. in a chemical vapor deposition reactor, flowing a stream of carrier gas over the substrate in the reactor, and simultaneously introducing mixtures of WF.sub.6 and organohydrosilanes into the reactor.
摘要翻译： 一种沉积钨膜的方法，包括在化学气相沉积反应器中将衬底加热至高于200℃的温度，将载气流在反应器中的衬底上流动，同时将WF 6和有机氢硅烷的混合物引入反应器中。
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公开(公告)号：US5322712A
公开(公告)日：1994-06-21
申请号：US64185
申请日：1993-05-18
CPC分类号： C23C16/18
摘要： Chemical Vapor Deposition of copper films is enhanced by simultaneously introducing in the reactor vapor of an organometallic copper precursor and copper complex vapor of a volatile ligand or the hydrate of the ligand.
摘要翻译： 化学气相通过在反应器蒸气中同时引入挥发性配体的有机金属铜前体和铜络合物蒸汽或配体的水合物来增强铜膜的沉积。
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4.发明授权Deposition of silicon dioxide and silicon oxynitride films using azidosilane sources 失效使用叠氮硅烷源沉积二氧化硅和氧氮化硅膜
公开(公告)号：US4992306A
公开(公告)日：1991-02-12
申请号：US473503
申请日：1990-02-01
CPC分类号： C23C16/402 , C23C16/308
摘要： A low temperature chemical vapor deposition process comprising heating a substrate upon which deposition is desired to a temperature of from about 350.degree. C. to about 700.degree. C. in a chemical vapor deposition reactor at a pressure of from about 0.1 torr to atmospheric pressure, introducing into the reactor a silicon-containing feed and an oxygen containing feed, said silicon containing feed consisting essentially of one or more compounds having the general formula ##STR1## wherein: R.sub.1, R.sub.2, and R.sub.3 are hydrogen, azido or 1-6 carbon alkyl, phenyl or 7 to 10 carbon alkaryl groups, at least one of R.sub.1 and R.sub.2 being 1-6 carbon alkyl, phenyl or 7-10 carbon alkaryl and maintaining the temperature and pressure in said ranges to cause a film of silicon dioxide or silicon oxynitride to deposit on said substrate is disclosed.
摘要翻译： 一种低温化学气相沉积方法，包括在化学气相沉积反应器中以约0.1托至大气压的压力加热需要沉积的基底至约350℃至约700℃的温度， 将含硅进料和含氧进料引入反应器中，所述含硅进料基本上由一种或多种具有通式为“IMAGE”的化合物组成，其中：R 1，R 2和R 3为氢，叠氮基或1-6碳 烷基，苯基或7至10个碳烷芳基，R 1和R 2中的至少一个为1-6个碳烷基，苯基或7-10碳烷芳基，并保持所述范围内的温度和压力，以引起二氧化硅或硅 公开了氮氧化物沉积在所述衬底上。
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公开(公告)号：US4992299A
公开(公告)日：1991-02-12
申请号：US473300
申请日：1990-02-01
IPC分类号： C23C16/34 , H01L21/318
CPC分类号： C23C16/345 , H01L21/3185
摘要： A method of producing a silicon nitride film on the surface of a substrate by thermal decomposition at said surface of a compound of the class ##STR1## wherein R.sub.1 R.sub.2 and R.sub.3 are hydrogen azido, 1 to 6 carbon alkyl, phenyl, or 7 to 10 carbon alkaryl, at least one of R.sub.1, R.sub.2, and R.sub.3 being 1-6 carbon alkyl, phenyl, or 7 to 10 carbon alkaryl, ethyltriazidosilane being uniquely superior, is disclosed.
摘要翻译： 其中R 1 + L，R 2 + L和R 3为氢化叠氮基，1至6个碳烷基的化合物在所述表面上通过热分解在基底表面上生产氮化硅膜的方法， 苯基或7至10个碳烷芳基，其中R 1，R 2和R 3中的至少一个为1-6个碳烷基，苯基或7至10个碳烷芳基，乙基三氮杂硅烷具有独特优势。
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公开(公告)号：US5626775A
公开(公告)日：1997-05-06
申请号：US645439
申请日：1996-05-13
IPC分类号： C23C16/44 , H01L21/02 , H01L21/311 , H01L21/3213 , H01L21/00
CPC分类号： H01L21/02071 , C23C16/4405 , H01L21/31116 , Y02C20/30 , Y02P70/605
摘要： The present invention is directed to the etching of a material selected from the group consisting of silicon dioxide, silicon nitride, boronphosphorus silicate glass, fluorosilicate glass, siliconoxynitride, tungsten, tungsten silicide and mixtures thereof under plasma etch conditions, particularly for cleaning operations to remove silicon dioxide or silicon nitride from the walls and other surfaces within a reaction chamber of a plasma-enhanced chemical vapor deposition reactor. The etching chemicals used in the etch process are trifluoroacetic acid and it derivatives, such as; trifluoroacetic anhydride, trifluoromethyl ester of trifluoroacetic acid and trifluoroacetic acid amide and mixtures thereof.
摘要翻译： 本发明涉及在等离子体蚀刻条件下蚀刻选自二氧化硅，氮化硅，磷硅酸盐玻璃，氟硅酸盐玻璃，硅氧氮化物，钨，硅化钨及其混合物的材料，特别是用于清除 来自等离子体增强化学气相沉积反应器的反应室内的壁和其它表面的二氧化硅或氮化硅。 在蚀刻过程中使用的蚀刻化学品是三氟乙酸及其衍生物，例如; 三氟乙酸酐，三氟乙酸的三氟甲酯和三氟乙酸酰胺及其混合物。
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公开(公告)号：US3966577A
公开(公告)日：1976-06-29
申请号：US466722
申请日：1974-05-03
申请人： Arthur K. Hochberg
发明人： Arthur K. Hochberg
IPC分类号： H01L21/263 , H01L21/308 , H01L21/76 , H01L21/762 , C23C15/00 , H01L21/302 , H01L21/314
CPC分类号： H01L21/76297 , H01L21/2633 , H01L21/308 , H01L21/76 , Y10S148/051 , Y10S148/131
摘要： The invention is a method of fabricating dielectrically isolated semiconductor regions adapted for the construction of an integrated circuit on an epitaxial wafer wherein the epitaxial wafer has a first layer of monocrystalline n+ type silicon of a predetermined thickness and a second layer of epitaxially deposited n-type silicon which is substantially thinner than the first layer. A layer of silicon dioxide is grown on the back side of the first layer of the wafer and a layer of polycrystalline silicon is deposited onto the silicon dioxide layer. An aluminum oxide mask is formed defining a plurality of grooves around active semiconductor regions within the n-type silicon layer. The grooves are formed by a sputter etching process. Silicon dioxide is thermally grown within each of the grooves exposed by the sputter etching process to dielectrically isolate the active semiconductor regions after which semiconductor devices may be formed in each of the active semiconductor regions.
摘要翻译： 本发明是一种制造适于在外延晶片上构建集成电路的介电隔离的半导体区域的方法，其中外延晶片具有预定厚度的第一层单晶n +型硅和第二层外延沉积的n型 基本上比第一层薄的硅。 在晶片的第一层的背面生长二氧化硅层，并且在二氧化硅层上沉积多晶硅层。 形成在n型硅层内限定有源半导体区周围的多个沟槽的氧化铝掩模。 通过溅射蚀刻工艺形成凹槽。 在通过溅射蚀刻工艺暴露的每个沟槽内热生长二氧化硅以介电地隔离有源半导体区域，其后可以在每个有源半导体区域中形成半导体器件。
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公开(公告)号：US5298075A
公开(公告)日：1994-03-29
申请号：US98496
申请日：1993-07-28
CPC分类号： H01L21/02238 , C23C16/4405 , H01L21/02255 , H01L21/31662
摘要： A process for thermal oxidation of silicon or cleaning of furnace tubes used in semiconductor manufacturing by exposing the silicon or tube to temperatures above 700.degree. C. while flowing a carrier gas containing oxygen and a chlorohydrocarbon having a general formula C.sub.x H.sub.x Cl.sub.x where x is 2, 3, or 4 over the silicon or tube. The chlorohydrocarbon is selected to readily and completely oxidize at temperature.
摘要翻译： 一种用于硅的热氧化或半导体制造中使用的炉管的清洁的方法，其中将硅或管暴露于高于700℃的温度，同时流过含有氧的载气和具有通式C x H x Cl x的氯代烃，其中x为2,3 ，或4个在硅或管上。 选择氯代烃在温度下容易且完全氧化。
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9.发明授权Deposition of silicon dioxide films at temperatures as low as 100 degree C. by LPCVD using organodisilane sources 失效在低于100℃的温度下沉积二氧化硅薄膜。通过使用有机硅源的LPCVD
公开(公告)号：US5204141A
公开(公告)日：1993-04-20
申请号：US762101
申请日：1991-09-18
CPC分类号： C23C16/402
摘要： Process for depositing films of silicon dioxide by a low pressure CVD method, utilizing 1,4 disilabutane as the silicon precursor and molecular oxygen as the oxygen source. The deposition process permits films to be put down on a substrate at temperatures as low as 100.degree. C. with essentially no carbon in the film. The 1,4 disilabutane can be used as a substitute for silane, a toxic, pyrophoric compressed gas.
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公开(公告)号：US5013690A
公开(公告)日：1991-05-07
申请号：US473546
申请日：1990-02-01
IPC分类号： H01L21/205 , H01L21/314 , H01L21/316 , H01L21/318
CPC分类号： H01L21/3185 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/3145 , H01L21/31612 , Y10S148/122 , Y10S438/934
摘要： A low temperature chemical vapor deposition process comprising heating in a chemical vapor depositon reactor a substrate upon which deposition is desired to a temperature of from about 550.degree. C. to about 750.degree. C. in a chemical vapor deposition reactor having a pressure of from about 0.1 torr to approximately atmospheric pressure, introducing into the reactor a silicon-containing feed and optionally an oxygen containing feed, said silicon containing feed consisting essentially of one or more compounds having the general formula ##STR1## wherein: R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are hydrogen, azido or C-2 to C-6 alkyl, aryl or C-7 to C-10 aralkyl groups, at least one but not more than three of R.sub.1, R.sub.2, R.sub.3 and R.sub.4, being azido, and maintaining the temperature and pressure to cause a film of silicon nitride, silicon oxynitride or silicon dioxide to deposit is disclosed.
摘要翻译： 一种低温化学气相沉积方法，其包括在化学气相沉积反应器中加热基底，在基底上沉积希望在约550℃至约750℃的温度下在具有约 0.1托至约大气压，将含硅进料和任选的含氧进料引入反应器中，所述含硅进料基本上由一种或多种具有通式为其中的化合物组成：其中：R1，R2，R3和R4 是氢，叠氮基或C-2至C-6烷基，芳基或C-7至C-10芳烷基，R1，R2，R3和R4中至少一个但不多于三个为叠氮基，并保持温度 并且公开了使氮化硅，氮氧化硅或二氧化硅的膜沉积的压力。
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