发明授权
- 专利标题： Sensitive thyristor having improved noise-capability
- 专利标题（中）： 具有改善噪声能力的敏感晶闸管
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申请号： US257673申请日： 1988-10-14
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公开(公告)号： US4982259A公开(公告)日： 1991-01-01
- 发明人: Shigenori Yakushiji , Kouji Jitsukata
- 申请人： Shigenori Yakushiji , Kouji Jitsukata
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX62-260869 19871016
- 主分类号： H01L21/332
- IPC分类号： H01L21/332 ; H01L27/144 ; H01L29/74 ; H01L29/749 ; H01L31/111
摘要：
A MOSFET is provided between a main thyristor and an auxiliary thyristor for controlling the main thyristor. The source and drain regions of the MOSFET are also used as a first N-type emitter region of the main thyristor and a second N-type emitter region of the auxiliary thyristor. The MOSFET and the auxiliary thyristor are controlled by an output of a gate energization circuit. When the MOSFET is turned on by an output of the gate energization circuit, the main thyristor is connected to the auxiliary thyristor. At this time, the auxiliary thyristor is turned on by the output of the gate energization circuit, and the main thyristor is also turned on due to the turn-on operation of the auxiliary thyristor. When the MOSFET is in the OFF state, the main thyristor is electrically isolated from the auxiliary thyristor.