发明授权
US4985740A Power field effect devices having low gate sheet resistance and low
ohmic contact resistance
失效
功率场效应器件具有低栅极电阻和低欧姆接触电阻
- 专利标题： Power field effect devices having low gate sheet resistance and low ohmic contact resistance
- 专利标题（中）： 功率场效应器件具有低栅极电阻和低欧姆接触电阻
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申请号： US359811申请日： 1989-06-01
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公开(公告)号： US4985740A公开(公告)日： 1991-01-15
- 发明人: Krishna Shenai , Bantval J. Baliga , Patricia A. Piacente , Charles S. Korman
- 申请人： Krishna Shenai , Bantval J. Baliga , Patricia A. Piacente , Charles S. Korman
- 申请人地址： NY Schenectady
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： NY Schenectady
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/331 ; H01L21/332 ; H01L21/336 ; H01L23/532 ; H01L29/417 ; H01L29/45 ; H01L29/49 ; H01L29/78
摘要：
A multi-cellular power field effect semiconductor device includes a tungsten silicide/polysilicon/oxide gate electrode stack with low sheet resistance. Preferably, a layer of tungsten is also disposed in intimate contact with the source region of the device. This tunsten layer is self-aligned with respect to the aperture in the gate electrode through which the source region is diffused. The presence of this tungsten layer greatly reduces the resulting ohmic contact resistance to the region. If desired, a tunsten layer can also be disposed in contact with the drain region of the device, again, to lower ohmic contact resistance. The device has substantially improved operating characteristics. Novel processes for producing the device are also described.