公开(公告)号：US4998151A

公开(公告)日：1991-03-05

申请号：US337684

申请日：1989-04-13

申请人： Charles S. Korman ,  Krishna Shenai ,  Bantval J. Baliga ,  Patricia A. Piacente ,  Bernard Gorowitz ,  Tat-Sing P. Chow ,  Manjin J. Kim

发明人： Charles S. Korman ,  Krishna Shenai ,  Bantval J. Baliga ,  Patricia A. Piacente ,  Bernard Gorowitz ,  Tat-Sing P. Chow ,  Manjin J. Kim

IPC分类号： H01L21/285 ,  H01L21/336 ,  H01L29/417 ,  H01L29/45 ,  H01L29/745 ,  H01L29/78

CPC分类号： H01L29/7802 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/28525 ,  H01L29/456 ,  H01L29/665 ,  H01L29/7455

摘要： A multi-cellular power field effect semiconductor device includes a high conductivity layer of metal or a metal silicide disposed in intimate contact with the source region of the device. This high conductivity layer is self-aligned with respect to the aperture in the gate electrode through which the source region is diffused. The presence of this high conductivity layer allows a substantially smaller contact window to be employed for making contact between the final metallization and the source region. As a consequence, the aperture in the gate electrode and the cell size of the device can both be substantially reduced. The device has substantially improved operating characteristics. A method of producing the device is also described.

公开(公告)号：US4985740A

公开(公告)日：1991-01-15

申请号：US359811

申请日：1989-06-01

申请人： Krishna Shenai ,  Bantval J. Baliga ,  Patricia A. Piacente ,  Charles S. Korman

发明人： Krishna Shenai ,  Bantval J. Baliga ,  Patricia A. Piacente ,  Charles S. Korman

IPC分类号： H01L21/28 ,  H01L21/331 ,  H01L21/332 ,  H01L21/336 ,  H01L23/532 ,  H01L29/417 ,  H01L29/45 ,  H01L29/49 ,  H01L29/78

CPC分类号： H01L29/66333 ,  H01L21/28061 ,  H01L23/53271 ,  H01L29/41741 ,  H01L29/66378 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/456 ,  H01L29/4933 ,  H01L2924/0002

摘要： A multi-cellular power field effect semiconductor device includes a tungsten silicide/polysilicon/oxide gate electrode stack with low sheet resistance. Preferably, a layer of tungsten is also disposed in intimate contact with the source region of the device. This tunsten layer is self-aligned with respect to the aperture in the gate electrode through which the source region is diffused. The presence of this tungsten layer greatly reduces the resulting ohmic contact resistance to the region. If desired, a tunsten layer can also be disposed in contact with the drain region of the device, again, to lower ohmic contact resistance. The device has substantially improved operating characteristics. Novel processes for producing the device are also described.

公开(公告)号：US5119153A

公开(公告)日：1992-06-02

申请号：US588515

申请日：1990-09-24

申请人： Charles S. Korman ,  Krishna Shenai

发明人： Charles S. Korman ,  Krishna Shenai

IPC分类号： H01L21/331 ,  H01L21/332 ,  H01L21/336 ,  H01L29/739 ,  H01L29/74 ,  H01L29/78

CPC分类号： H01L29/66333 ,  H01L29/66378 ,  H01L29/665 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/742 ,  H01L29/7802 ,  Y10S257/90

摘要： A multi-cellular power field effect semiconductor device has compact cells including a heavily doped portion of a body region which is self-aligned with respect to an aperture in the gate electrode. The intercept of this heavily doped portion of the body region with the upper surface of the device may also be self-aligned with respect to the aperture and the gate electrode. A method of producing the device is also disclosed.

摘要翻译： 多蜂窝功率场效应半导体器件具有紧凑的单元，其包括相对于栅电极中的孔自对准的体区的重掺杂部分。 具有器件的上表面的体区的该重掺杂部分的截距也可以相对于孔径和栅电极自对准。 还公开了一种制造该器件的方法。

公开(公告)号：US5234851A

公开(公告)日：1993-08-10

申请号：US829667

申请日：1992-02-03

申请人： Charles S. Korman ,  Krishna Shenai

发明人： Charles S. Korman ,  Krishna Shenai

IPC分类号： H01L21/331 ,  H01L21/332 ,  H01L21/336 ,  H01L29/739 ,  H01L29/74 ,  H01L29/78

CPC分类号： H01L29/66333 ,  H01L29/66378 ,  H01L29/665 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/742 ,  H01L29/7802

摘要： A multi-cellular power field effect semiconductor device has compact cells including a heavily doped portion of a body region which is self-aligned with respect to an aperture in the gate electrode. The intercept of this heavily doped portion of the body region with the upper surface of the device may also be self-aligned with respect to the aperture and the gate electrode. A method of producing the device is also disclosed.

摘要翻译： 多蜂窝功率场效应半导体器件具有紧凑的单元，其包括相对于栅电极中的孔自对准的体区的重掺杂部分。 具有器件的上表面的体区的该重掺杂部分的截距也可以相对于孔径和栅电极自对准。 还公开了一种制造该器件的方法。

公开(公告)号：US20090222921A1

公开(公告)日：2009-09-03

申请号：US12040553

申请日：2008-02-29

申请人： Supratik Mukhopadhyay ,  Krishna Shenai ,  Rabindra K. Roy ,  Nathan Jack

发明人： Supratik Mukhopadhyay ,  Krishna Shenai ,  Rabindra K. Roy ,  Nathan Jack

IPC分类号： G08B23/00 ,  G06F9/45 ,  G06F15/173 ,  G06N5/02

CPC分类号： G06N5/04 ,  G06F8/30

摘要： A system and method are disclosed for utilizing resources of a network. A constructive proof that a subset of resources is sufficient to satisfy the objective of a system can be generated. The constructive proof can comprise instructions for using the subset of resources. A set of computer-executable instructions can be created from the constructive proof and executed on a host device. The computer-executable instructions can control a data output device according to the instructions of the constructive proof.

摘要翻译： 公开了一种利用网络资源的系统和方法。 可以生成一个资源子集足以满足系统目标的建设性证据。 建设性证明可以包括使用资源子集的指令。 可以从建设性证据中创建一组计算机可执行指令，并在主机设备上执行。 计算机可执行指令可以根据建设性证明的指示来控制数据输出设备。

公开(公告)号：US20100167820A1

公开(公告)日：2010-07-01

申请号：US12649277

申请日：2009-12-29

申请人： HOUSSAM BARAKAT ,  Bradford R. Lilly ,  Krishna Shenai

发明人： HOUSSAM BARAKAT ,  Bradford R. Lilly ,  Krishna Shenai

IPC分类号： A63F9/24

CPC分类号： A63F13/285 ,  A63F13/06 ,  A63F2300/1012 ,  A63F2300/1037

摘要： A human interface device with an inherent built-in feedback mechanism for use by a user to remotely interface with a computer-simulated environment is disclosed herein. The human interface device comprises at least one sensor configured to sense a condition within the action of the computer-simulated environment and also operable to generate a communication concerning the sensed condition. At least one micro-controller is positioned within the human interface device and configured to receive the communication concerning the sensed condition from the at least one sensor. The at least one micro-controller is further configured to generate communication in reaction to the communication from the sensor. At least one actuator is configured to receive the communication from the at least one micro-controller and provide a sensory experience in reaction to the communication.

摘要翻译： 本文公开了一种具有固有内置反馈机构的人机接口设备，供用户远程与计算机仿真环境接口使用。 所述人机界面装置包括至少一个传感器，所述至少一个传感器被配置为感测所述计算机仿真环境的动作内的状况，并且还可操作以产生与感测到的状况有关的通信 至少一个微控制器定位在人机接口设备内并且被配置为从至少一个传感器接收与感测到的状况有关的通信。 所述至少一个微控制器还被配置为响应于来自传感器的通信而产生通信。 至少一个致动器被配置为从所述至少一个微控制器接收通信，并提供对通信的反应的感觉体验。

公开(公告)号：US20080171512A1

公开(公告)日：2008-07-17

申请号：US11763961

申请日：2007-06-15

申请人： Nathan Jack ,  Krishna Shenai

发明人： Nathan Jack ,  Krishna Shenai

IPC分类号： H04B5/00

CPC分类号： H04B5/02

摘要： Disclosed are embodiments of methods and systems for wireless data transmission by magnetic induction. In one embodiment, a network of magnetic induction units is provided. The units may be configured to transmit a data signal by modulation of a time-varying magnetic field. One or more units may also be configured to receive a data signal received from another magnetic induction unit. In one specific implementation, a network of underground magnetic induction units is provided, each having a sensor connected thereto. Each of the units, or a subset of the units, may be configured to transmit its sensed data to an adjacent or nearby unit, which, in turn, may retransmit the original data, along with additional appended data, to another adjacent unit. The network data may thereby be relayed in a multi-hop fashion until it reaches a desired destination.

摘要翻译： 公开了通过磁感应进行无线数据传输的方法和系统的实施例。 在一个实施例中，提供了磁感应单元的网络。 这些单元可以被配置为通过调制时变磁场来发送数据信号。 一个或多个单元也可以被配置为接收从另一个磁感应单元接收的数据信号。 在一个具体实施方式中，提供了一个地下磁感应单元的网络，每个都具有连接到其上的传感器。 每个单元或单元的子集可以被配置为将其感测数据发送到相邻或附近的单元，这又可以将原始数据连同另外的附加数据一起发送到另一相邻单元。 因此，网络数据可以以多跳方式中继，直到其到达期望的目的地。

公开(公告)号：US06608503B2

公开(公告)日：2003-08-19

申请号：US10217892

申请日：2002-08-12

申请人： Krishna Shenai ,  Erik A. McShane ,  Manigandan Radhakrishnan

发明人： Krishna Shenai ,  Erik A. McShane ,  Manigandan Radhakrishnan

IPC分类号： H03K522

CPC分类号： H03K5/249

摘要： A data comparator that operates on an input voltage signal and a reference voltage signal is disclosed. Internally, the comparator includes replicated circuitry to produce differential gain. Each set of replicated circuitry includes two gain stages for high amplification, high sampling rate, and for reducing kickback noise at the input voltage signal and the reference voltage signal. The comparator may further include self-biased CMOS inverters for cancellation of input offset error and a rail-to-rail regenerative output latch. The circuit can also include a comparator bias circuit that can improve the speed of the auto-zero operation.

公开(公告)号：US06791341B2

公开(公告)日：2004-09-14

申请号：US10217894

申请日：2002-08-12

申请人： Krishna Shenai ,  Erik A. McShane

发明人： Krishna Shenai ,  Erik A. McShane

IPC分类号： G01R2728

CPC分类号： G01R19/12 ,  G01R19/0092

摘要： A system and method for detecting, measuring, and reporting a time derivate of a current signal (di/dt). A sensing element detects current from a load. The sensing element includes an inductor. The inductor is located in series with the load and includes associated parasitic resistance. A differential potential develops across the inductor and the parasitic resistance. The differential potential is amplified and converted to a single-ended value. The single-ended value is then fed to an analog to digital converter that provides an output representative of di/dt.

摘要翻译： 用于检测，测量和报告当前信号（di / dt）的时间导数的系统和方法。 感测元件检测来自负载的电流。 感测元件包括电感器。 电感器与负载串联，并包括相关的寄生电阻。 在电感器和寄生电阻之间产生差分电位。 差分电位被放大并转换为单端值。 然后将单端值馈送到模数转换器，该转换器提供代表di / dt的输出。

公开(公告)号：US06714049B2

公开(公告)日：2004-03-30

申请号：US10217895

申请日：2002-08-12

申请人： Krishna Shenai ,  Erik A. McShane

发明人： Krishna Shenai ,  Erik A. McShane

IPC分类号： H03K190175

CPC分类号： G01R31/31721 ,  G01R31/3004 ,  H03K5/08 ,  H03K5/1534

摘要： A logic state transition sensor circuit. The logic state transition sensor circuit detects and records transitions in voltage corresponding to a transition of a digital logic state (high to low; low to high). The logic state transition sensor circuit may include a sensing circuit containing sensing and amplification elements and a recording circuit containing recording elements. When a logic state transition occurs at an input of the sensing circuit, a positive logic pulse may be generated. Propagation of the logic pulse to the recording circuit causes a charge to be transferred to an output stage capacitor. Repeated logic state transitions cause similar incremental increases in the charge of the output stage capacitor. Charge transfer is governed by ratios of capacitors internal to the recording circuit and hence may be insensitive to process variation. The output stage capacitor may output a voltage representative of a number of logic state transitions sensed.

摘要翻译： 逻辑状态转换传感器电路。 逻辑状态转换传感器电路检测并记录对应于数字逻辑状态（从高到低;从低到高）的转变的电压转换。 逻辑状态转换传感器电路可以包括包含感测和放大元件的感测电路和包含记录元件的记录电路。 当在感测电路的输入处发生逻辑状态转换时，可产生正逻辑脉冲。 将逻辑脉冲传播到记录电路使得电荷被传送到输出级电容器。 重复的逻辑状态转换导致输出级电容器的电荷的类似增量增加。 电荷转移由记录电路内部的电容器的比例控制，因此可能对工艺变化不敏感。 输出级电容器可以输出表示感测的逻辑状态转换的数量的电压。