发明授权
- 专利标题: Non-volatile semiconductor memory device erasing operation
- 专利标题(中): 非易失性半导体存储器件擦除操作
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申请号: US375956申请日: 1989-07-06
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公开(公告)号: US4996571A公开(公告)日: 1991-02-26
- 发明人: Hitoshi Kume , Yoshiaki Kamigaki , Tetsuo Adachi , Toshihisa Tsukada , Kazuhiro Komori , Toshiaki Nishimoto , Tadashi Muto , Toshiko Koizumi
- 申请人: Hitoshi Kume , Yoshiaki Kamigaki , Tetsuo Adachi , Toshihisa Tsukada , Kazuhiro Komori , Toshiaki Nishimoto , Tadashi Muto , Toshiko Koizumi
- 申请人地址: JPX Tokyo JPX Chiba
- 专利权人: Hitachi, Ltd.,Hitachi Device Engineering Co., Ltd.
- 当前专利权人: Hitachi, Ltd.,Hitachi Device Engineering Co., Ltd.
- 当前专利权人地址: JPX Tokyo JPX Chiba
- 优先权: JPX63-168855 19880708
- 主分类号: G11C17/00
- IPC分类号: G11C17/00 ; G11C16/04 ; G11C16/14 ; H01L29/788
摘要:
The invention relates to a tunnel erasing device for a non-volatile semiconductor memory device comprising a source region and a drain region, a floating gate electrode having a part superposed on at least one of them through a gate insulating layer, and a control gate electrode disposed over the floating gate electrode through an interlayer insulating layer and is characterized as having a preliminary erasing operation in which a voltage is so applied to at least one of the source or drain region, with the control gate electrode grounded, that a relatively lower voltage than a predetermined voltage is applied preliminarily prior to applying thereto the predetermined voltage.
公开/授权文献
- US5595475A Agitating element 公开/授权日:1997-01-21