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US5023696A Semiconductor device having composite substrate formed by fixing two semiconductor substrates in close contact with each other 失效
具有通过将两个半导体衬底彼此紧密接合而形成的复合衬底的半导体器件

Semiconductor device having composite substrate formed by fixing two
semiconductor substrates in close contact with each other
摘要:
A semiconductor element is formed in a composite substrate constructed by fixing two semiconductor substrates in close contact with each other, and crystal defects are formed in that portion of at least one of the two semiconductor substrates which lies near the junction plane of the two semiconductor substrates. The crystal defects act as the center of the recombination of excess minority carriers accumulated in an active region of the semiconductor element.
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