发明授权
US5025741A Method of making semiconductor integrated circuit device with
polysilicon contacts
失效
制造具有多晶硅接触的半导体集成电路器件的方法
- 专利标题： Method of making semiconductor integrated circuit device with polysilicon contacts
- 专利标题（中）： 制造具有多晶硅接触的半导体集成电路器件的方法
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申请号： US344404申请日： 1989-04-28
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公开(公告)号： US5025741A公开(公告)日： 1991-06-25
- 发明人: Naokatsu Suwanai , Osamu Tsuchiya
- 申请人： Naokatsu Suwanai , Osamu Tsuchiya
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX63-109781 19880502
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/20 ; H01L21/28 ; H01L21/285 ; H01L21/31 ; H01L21/3205 ; H01L21/768 ; H01L21/822 ; H01L21/8242 ; H01L23/522 ; H01L23/532 ; H01L27/04 ; H01L27/10 ; H01L27/108 ; H01L29/43
摘要：
A semiconductor integrated circuit device having a wiring line of aluminum film or aluminum alloy film covered with a silicon insulation film and connected to the semiconductor region formed on the principal surface of a single crystal silicon substrate, with a polycrystalline silicon film interposed, wherein said silicon film is a polycrystalline silicon film composed of large crystal grains which is formed by depositing in amorphous state and then heat-treating the deposited film, said polycrystalline silicon film reduces the amount of silicon atoms which separates out in said wiring line. Also said wiring line is provided with a shielding film which is disposed between said insulation film and at least the upper surface and lower surface of said wiring line and which prevents silicon atoms from separating out from said insulation film.A process for manufacturing a semiconductor integrated circuit device which comprises the steps of depositing an amorphous silicon film on the principal surface of said semiconductor region, and performing heat treatment on said silicon film, thereby converting the amorphous silicon film into a polycrystalline silicon film composed of large crystal grains.
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