A method, and devices produced therewith, for the epitaxial growth of sub-micron semiconductor structures with at least one crystal plane-dependently grown, buried active layer (24) consisting of a III-V compound. The active layer (24) and adjacent embedding layers (23, 25) form a heterostructure produced in a one-step growth process not requiring removal of the sample from the growth chamber in between layer depositions. The layers of the structure are grown on a semiconductor substrate (21) having a structured surface exposing regions of different crystal orientation providing growth and no-growth-planes for the selective growth process. The method allows the production of multiple, closely spaced active layers and of layers consisting of adjoining sections having different physical properties.