发明授权
- 专利标题： Semiconductor laser using five-element compound semiconductor
- 专利标题（中）： 半导体激光器采用五元素化合物半导体
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申请号： US508694申请日： 1990-04-13
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公开(公告)号： US5042043A公开(公告)日： 1991-08-20
- 发明人: Ako Hatano , Toshihide Izumiya , Yasuo Ohba
- 申请人： Ako Hatano , Toshihide Izumiya , Yasuo Ohba
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX1-110502 19890428
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; H01L33/06 ; H01L33/12 ; H01L33/14 ; H01L33/32 ; H01S5/00 ; H01S5/223 ; H01S5/32 ; H01S5/323 ; H01S5/343
摘要：
A green light-emitting semiconductor laser using a superlattice layer wherein BP layers and Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers are alternately stacked and each of the Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers has a zinc blende type crystal structure, or a Ga.sub.x Al.sub.y B.sub.1-x-y N.sub.z P.sub.1-z (0.ltoreq.x, y, z.ltoreq.1) mixed crystal layers with a zinc blende type structure a first clad layer of a first conductivity type, an active layer, and a second clad layer of a second conductivity type, together constituting a double heterojunction.
公开/授权文献
- US5790605A Method for determining voting windows in a diversity repeater 公开/授权日：1998-08-04