发明授权
- 专利标题： Semiconductor ballistic electron velocity control structure
- 专利标题（中）： 半导体弹道电子速度控制结构
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申请号： US61036申请日： 1987-06-12
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公开(公告)号： US5049955A公开(公告)日： 1991-09-17
- 发明人: John L. Freeouf , Thomas N. Jackson , Peter D. Kirchner , Jeffrey Y. Tang , Jerry M. Woodall
- 申请人： John L. Freeouf , Thomas N. Jackson , Peter D. Kirchner , Jeffrey Y. Tang , Jerry M. Woodall
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L21/331 ; H01L29/68 ; H01L29/737 ; H01L29/76
摘要：
A semiconductor device where an emitter material composition and doping profile produces an electron gas in a base adjacent a band offset heterojunction interface, the electrons in the electron gas in the base are confined under bias by a low barrier and the ballistic carriers have their kinetic energy controlled to prevent intervalley scattering by an electrostatic barrier that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.
公开/授权文献
- US6149890A Chelated complexes of paramagnetic metals with low toxicity 公开/授权日：2000-11-21
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