发明授权
- 专利标题： Semiconductor integrated circuit device
- 专利标题（中）： 半导体集成电路器件
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申请号： US526696申请日： 1990-05-23
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公开(公告)号： US5057894A公开(公告)日： 1991-10-15
- 发明人: Takahide Ikeda , Kouichirou Yamada , Osamu Saito , Masanori Odaka , Nobuo Tamba , Katsumi Ogiue , Atsushi Hiraishi , Atsuo Watanabe , Mitsuru Hirao , Akira Fukami , Masayuki Ohayashi , Tadashi Kuramoto
- 申请人： Takahide Ikeda , Kouichirou Yamada , Osamu Saito , Masanori Odaka , Nobuo Tamba , Katsumi Ogiue , Atsushi Hiraishi , Atsuo Watanabe , Mitsuru Hirao , Akira Fukami , Masayuki Ohayashi , Tadashi Kuramoto
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX62-116089 19870513; JPX62-217095 19870831
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L21/8249 ; H01L27/06
摘要：
Disclosed is a bipolar-CMOS LSI manufactured by a simplified process and realizing a higher density of integration as well as a higher operating speed, in which a base lead-out electrode of a bipolar transistor and respective gate electrodes of a p-channel MISFET and an n-channel MISFET of CMOS transistors are made of an identical conductor film, and the conductor film of the gate electrode of the p-channel MISFET is of p-type, while that of the gate electrode of the n-channel MISFET is of n-type.
公开/授权文献
- US5864161A Semiconductor device and manufacturing method thereof 公开/授权日：1999-01-26
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