摘要:
Disclosed is a bipolar-CMOS LSI manufactured by a simplified process and realizing a higher density of integration as well as a higher operating speed, in which a base lead-out electrode of a bipolar transistor and respective gate electrodes of a p-channel MISFET and an n-channel MISFET of CMOS transistors are made of an identical conductor film, and the conductor film of the gate electrode of the p-channel MISFET is of p-type, while that of the gate electrode of the n-channel MISFET is of n-type.
摘要:
Disclosed is a bipolar-CMOS LSI manufactured by a simplified process and realizing a higher density of integration as well as a higher operating speed, in which a base lead-out electrode of a bipolar transistor and respective gate electrodes of a p-channel MISFET and an n-channel MISFET of CMOS transistors are made of an identical conductor film, and the conductor film of the gate electrode of the p-channel MISFET is of p-type, while that of the gate electrode of the n-channel MISFET is of n-type.
摘要:
Disclosed is a bipolar-CMOS LSI manufactured by a simplified process and realizing a higher density of integration as well as a higher operating speed, in which a base lead-out electrode of a bipolar transistor and respective gate electrodes of a p-channel MISFET and an n-channel MISFET of CMOS transistors are made of an identical conductor film, and the conductor film of the gate electrode of the p-channel MISFET is of p-type, while that of the gate electrode of the n-channel MISFET is of n-type.
摘要:
A SRAM of complete CMOS type having its memory cell composed of six MISFETs, in which a pair of local wiring lines for connecting the input/output terminals of CMOS inverters are formed of a refractory metal silicide layer formed over a first conducting layer constituting the individual gate electrodes of the drive MISFETs, the transfer MISFETs and the load MISFETs of the memory cell and in which a reference voltage line formed over the local wiring lines is arranged to be superposed over the local wiring lines to form a capacity element. Moreover, the capacity element is formed between the local wiring lines and the first conducting layer by superposing the local wiring lines over the first conducting layer. Moreover, the local wiring lines are formed by using resistance lowering means such as silicification. In addition, there are made common the means for lowering the resistance of the gate electrode of the transfer MISFETs and the means for forming the local wiring lines.
摘要:
A SRAM of complete CMOS type having its memory cell composed of six MISFETs, in which a pair of local wiring lines for connecting the input/output terminals of CMOS inverters are formed of a refractory metal silicide layer formed over a first conducting layer constituting the individual gate electrodes of the drive MISFETs, the transfer MISFETs and the load MISFETs of the memory cell and in which a reference voltage line formed over the local wiring lines is arranged to be superposed over the local wiring lines to form a capacity element. Moreover, the capacity element is formed between the local wiring lines and the first conducting layer by superposing the local wiring lines over the first conducting layer. Moreover, the local wiring lines are formed by using resistance lowering means such as silicification. In addition, there are made common the means for lowering the resistance of the gate electrode of the transfer MISFETs and the means for forming the local wiring lines.
摘要:
A SRAM of complete CMOS type having its memory cell composed of six MISFETs, in which a pair of local wiring lines for connecting the input/output terminals of CMOS inverters are formed of a refractory metal silicide layer formed over a first conducting layer constituting the individual gate electrodes of the drive MISFETs, the transfer MISFETs and the load MISFETs of the memory cell and in which a reference voltage line formed over the local wiring lines is arranged to be superposed over the local wiring lines to form a capacity element. Moreover, the capacity element is formed between the local wiring lines and the first conducting layer by superposing the local wiring lines over the first conducting layer. Moreover, the local wiring lines are formed by using resistance lowering means such as silicification. In addition, there are made common the means for lowering the resistance of the gate electrode of the transfer MISFETs and the means for forming the local wiring lines.
摘要:
A SRAM of complete CMOS type having its memory cell composed of six MISFETs, in which a pair of local wiring lines for connecting the input/output terminals of CMOS inverters are formed of a refractory metal silicide layer formed over a first conducting layer constituting the individual gate electrodes of the drive MISFETs, the transfer MISFETs and the load MISFETs of the memory cell and in which a reference voltage line formed over the local wiring lines is arranged to be superposed over the local wiring lines to form a capacitor. The capacitor is formed between the local wiring lines and the first conducting layer by superposing the local wiring lines over the first conducting layer. Moreover, the local wiring lines are formed by using a structure with decreased resistance such as silicided structure. In addition, there are made common the processing for lowering the resistance of the gate electrode of the transfer MISFETs and the processing for forming the local wiring lines.
摘要:
A suspension control system for controlling a suspension having a shock absorber provided for each wheel of a vehicle includes a damping force change rate detector which detects a damping force change rate indicating a rate of change of a damping force of the shock absorber, and a damping force controller which alters the setting of the damping force on the basis of a relationship between the damping force change rate and an adjustment reference value. The system also includes a road surface condition detector which detects a condition of a road surface on which the vehicle is running on the basis of a change of the damping force of the shock absorber. Further, the system includes a damping force adjustment correcting unit which corrects the adjustment reference value by learning the adjustment reference value on the basis of a parameter related to the damping force of the shock absorber which reflects the condition of the road surface.
摘要:
A suspension control system for controlling a suspension having a shock absorber provided for a wheel of a vehicle includes a damping force detector which generates a damping force detection signal which indicates a change of a damping force of the shock absorber based on a condition of a road surface on which the vehicle is running. The system also includes a sprung resonance component extraction unit which extracts a sprung resonance component signal from the damping force detection signal. The sprung resonance component signal includes components having frequencies around a sprung resonance frequency of the shock absorber. Further, the system includes a determining part which determines whether or not the sprung resonance component signal exceeds a first level range provided for detecting a sign of the occurrence of a long-term vehicle vibration and which outputs a determination result. Moreover, the system includes a damping force controller which controls the shock absorber so that when the determining part determines that the sprung resonance component signal exceeds the first level range, the damping force of the shock absorber is altered to and maintained at an increased level and thus the suspension is maintained at a state which corresponds to the increased level and which is harder than before.
摘要:
A car spoiler having an aerodynamic surface for controlling the airflow around the automotive body is provided with a built-in liquid handling means which is used as a liquid reservoir, heat storage tank, or heat exchanger. The heat storage tank may be used to store the hot coolant of the cooling system of the engine during normal operation and to supply the hot coolant to the cooling system in order to quickly warm up the engine or to the hot-water car heater system in order to heat the passenger compartment during cold start of the engine. The built-in heat exchanger may be used to cool the engine coolant, engine lubricant, or transmission oil of the automatic transmission system.