发明授权
- 专利标题: Apparatus for coating of silicon semiconductor surface
- 专利标题(中): 用于涂覆硅半导体表面的装置
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申请号: US329847申请日: 1989-03-28
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公开(公告)号: US5067437A公开(公告)日: 1991-11-26
- 发明人: Tohru Watanabe , Katsuya Okumura
- 申请人: Tohru Watanabe , Katsuya Okumura
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX63-73628 19880328
- 主分类号: H01L21/316
- IPC分类号: H01L21/316 ; H01L21/00 ; H01L21/302 ; H01L21/3065 ; H01L21/311 ; H01L21/768
摘要:
An apparatus for forming a film on the silicon surface of an intermediate semiconductor device, wherein a silicon oxide film on the intermediate semiconductor device is etched out with an active species without damage to the silicon surface, the difference between the etching speeds of the silicon and the silicon oxide film being 5 or less. Immediately after the etching, another film is formed on the surface of the silicon without the surface being exposed to the atmosphere. Thus, the etching of the silicon oxide film and the forming of another film can be performed in the same chamber or different chambers.
公开/授权文献
- US6067826A Door lock actuator 公开/授权日:2000-05-30