发明授权
US5075888A Semiconductor memory device having a volatile memory device and a
non-volatile memory device
失效
具有易失性存储器件和非易失性存储器件的半导体存储器件
- 专利标题： Semiconductor memory device having a volatile memory device and a non-volatile memory device
- 专利标题（中）： 具有易失性存储器件和非易失性存储器件的半导体存储器件
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申请号： US308854申请日： 1989-02-09
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公开(公告)号： US5075888A公开(公告)日： 1991-12-24
- 发明人: Yoshimitsu Yamauchi , Kenichi Tanaka , Keizo Sakiyama
- 申请人： Yoshimitsu Yamauchi , Kenichi Tanaka , Keizo Sakiyama
- 申请人地址： JPX Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JPX Osaka
- 优先权： JPX63-28511 19880109; JPX63-157078 19880624; JPX63-175774 19880714; JPX63-175775 19880714; JPX63-210142 19880824
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C11/404 ; G11C14/00 ; G11C11/40
摘要：
A semiconductor memory device composed of a DRAM, an EEPROM, a mode switch means for selecting either mode of the DRAM mode and the EEPROM mode, and a transfer means for transferring data stored in the DRAM to the EEPROM and vice versa. The DRAM consists of one transistor and one capacitor, and one of the terminals of the capacitor is electrically isolated.
公开/授权文献
- US5497106A BICMOS output buffer circuit having overshoot protection 公开/授权日：1996-03-05
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