发明授权
- 专利标题： Method of making stacked textured container capacitor
- 专利标题（中）： 堆叠纹理容器电容器的制作方法
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申请号： US645086申请日： 1991-01-22
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公开(公告)号： US5082797A公开(公告)日： 1992-01-21
- 发明人: Hiang C. Chan , Pierre Fazan , Yauh-Ching Liu
- 申请人： Hiang C. Chan , Pierre Fazan , Yauh-Ching Liu
- 申请人地址： ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： ID Boise
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/02 ; H01L21/822 ; H01L21/8242 ; H01L27/10 ; H01L27/108
摘要：
A stacked textured container capacitor (STCC) using a modified stacked capacitor storage cell fabrication process. The STCC is made up of a texturized polysilicon structure, having an elongated u-shaped cross-section, located at a buried contact and extending to an adjacent storage node overlaid by polysilicon with a dielectric sandwiched in between. With the 3-dimensional shape and texturized surface of a polysilicon storage node plate substantial capacitor plate surface area of 200% or more is gained at the storage node.
公开/授权文献
- US5714004A Process for producing polycrystalline semiconductors 公开/授权日：1998-02-03
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