发明授权
- 专利标题: Sputtering apparatus for forming thin films
- 专利标题(中): 用于形成薄膜的溅射装置
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申请号: US450461申请日: 1989-12-14
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公开(公告)号: US5085755A公开(公告)日: 1992-02-04
- 发明人: Eiji Setoyama , Mitsuhiro Kamei , Yasunori Ohno
- 申请人: Eiji Setoyama , Mitsuhiro Kamei , Yasunori Ohno
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX63-318418 19881219
- 主分类号: C23C14/36
- IPC分类号: C23C14/36 ; C23C14/34 ; C23C14/35 ; H01J37/34
摘要:
An apparatus for forming a thin film of a given material on one or more substrates comprises a vacuum vessel, a first electrode which is provided in the vacuum vessel for holding a target plate of the given material thereon, a second electrode which is provided opposite to the first electrode in the vacuum vessel to form a discharge space between the first and second electrodes and holds the substrate(s) thereon, a gas conduit for supplying a sputtering gas into the discharge space, power sources for applying a discharge voltage between the first and second electrodes to generate a discharge plasma of the sputtering gas, and a magnetic field generating device which is provided to surround the discharge space and generates a magnetic field effective to prevent the discharge plasma from diffusing to the outside of the discharge space.
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