Magnetron sputter apparatus and method for forming films by using the
same apparatus
    2.
    发明授权
    Magnetron sputter apparatus and method for forming films by using the same apparatus 失效
    磁控溅射装置和使用相同装置形成薄膜的方法

    公开(公告)号:US4865709A

    公开(公告)日:1989-09-12

    申请号:US207537

    申请日:1988-06-16

    CPC classification number: H01J37/3423 C23C14/35 H01J37/3408 H01J37/347

    Abstract: A magnetron sputter apparatus according to the present invention is constructed so as to satisfy a predetermined optimum relationship between the size of the erosion area on the surface of the target and that of a film forming region. Further, the distance between the target and substrates has a value predetermined for the relationship between the size of the erosion area on the surface of the target and that of the film forming region. By using the magnetron sputter apparatus according to the present invention it is possible to form a homogeneous thin film excellent in step coverage and having a film thickness distribution in which variations are small over a large area.

    Abstract translation: 根据本发明的磁控溅射装置被构造成满足目标表面上的侵蚀区域的大小与成膜区域的预定最佳关系。 此外,靶和基板之间的距离具有对于靶的表面上的侵蚀区域的尺寸与成膜区域的尺寸之间的关系预定的值。 通过使用根据本发明的磁控溅射装置,可以形成具有优异的台阶覆盖率并且具有在大面积上变化小的膜厚度分布的均匀薄膜。

    Sputtering apparatus
    3.
    发明授权
    Sputtering apparatus 失效
    溅射装置

    公开(公告)号:US4673482A

    公开(公告)日:1987-06-16

    申请号:US911421

    申请日:1986-09-25

    CPC classification number: C23C14/351 H01J37/3402

    Abstract: A sputtering apparatus for sputtering magnetic materials. The apparatus comprises at least one pair of magnetic field-generating sources, a substrate disposed within the magnetic field-generating sources, a target disposed opposite to the substrate, and a magnetic thin plate disposed at a side of the substrate which is remote from the target. The magnetic thin plate is disposed at a position in close contact with the substrate or a position slightly away from the substrate, or is disposed movably between such positions. When sputtering a magnetic material onto the substrate, a uniform magnetic field can be generated on the substrate surface by virtue of the provision of the thin magnetic plate.

    Abstract translation: 溅射磁性材料的溅射装置。 该装置包括至少一对磁场产生源,设置在磁场产生源内的衬底,与衬底相对设置的靶和设置在衬底侧的远离 目标。 磁性薄板设置在与基板紧密接触的位置或稍微远离基板的位置,或者可移动地设置在这些位置之间。 当将磁性材料溅射到衬底上时,通过提供薄磁板,可以在衬底表面上产生均匀的磁场。

    Film forming system using high frequency power and power supply unit for
the same
    5.
    发明授权
    Film forming system using high frequency power and power supply unit for the same 失效
    使用高频电源的成膜系统和相同的电源单元

    公开(公告)号:US5116482A

    公开(公告)日:1992-05-26

    申请号:US587034

    申请日:1990-09-24

    Abstract: A film forming system including an evacuating unit, a pair of opposed electrodes and an RF voltage supplying unit for suppling RF voltages to the respective electrodes to generate a discharge between the electrodes to form a film. The film forming system includes: a discharge variation detecting unit for detecting an amount of a variation in the discharge as a voltage from each of the electrodes; and a phase adjusting unit for detecting the difference in phase between the RF voltages supplied to the electrodes, and for adjusting the phase difference of the RF voltages supplied to the electrodes, according to the difference between the detected phase difference and a preset value.

    Abstract translation: 一种成膜系统,包括排气单元,一对相对电极和RF电压供应单元,用于向各个电极提供RF电压以在电极之间产生放电以形成膜。 成膜系统包括:放电变化检测单元,用于检测作为每个电极的电压的放电变化量; 以及相位调整单元,用于根据所检测的相位差和预设值之间的差异,检测供给到电极的RF电压之间的相位差,并且用于调整提供给电极的RF电压的相位差。

    Plasma processing apparatus and method of cleaning the apparatus
    6.
    发明授权
    Plasma processing apparatus and method of cleaning the apparatus 失效
    等离子体处理装置和清洁装置的方法

    公开(公告)号:US06196155B1

    公开(公告)日:2001-03-06

    申请号:US09290169

    申请日:1999-04-13

    Abstract: A plasma processing apparatus comprises a plasma generating chamber including a side wall and a roof-plate to cover the upper part of the side wall, in which plasma is generated; a plurality of magnets, one group of the magnets being arranged on the roof-plate in concentric circles, with the polarity of each magnets in each circle being alternated, and the other group of the magnets being arranged around the side wall of the plasma generating chamber in rings, with the polarity of each magnet in each ring being alternated, to form a cusped magnetic field to confine the plasma in the plasma generating chamber; and a holding device which is provided in the plasma generating chamber, to hold a substrate to be processed with the plasma; wherein the magnet means arranged on the roof-plate and the magnet means arranged around the side wall are held in such a way that they can be moved up and down.

    Abstract translation: 等离子体处理装置包括等离子体产生室,其包括侧壁和顶板,以覆盖其中产生等离子体的侧壁的上部; 多个磁体,一组磁体以同心圆布置在屋顶板上,每个圆中的每个磁体的极性交替,另一组磁体围绕等离子体产生的侧壁布置 每个环中的每个磁体的极性交替,以形成一个限定的等离子体在等离子体产生室中的脉冲磁场; 以及保持装置,其设置在所述等离子体产生室中,以用所述等离子体保持待处理的基板; 其中布置在屋顶板上的磁体装置和围绕侧壁布置的磁铁装置被保持为使得它们能够上下移动。

    Sputtering apparatus, device for exchanging target and method for the
same
    8.
    发明授权
    Sputtering apparatus, device for exchanging target and method for the same 失效
    溅射装置,用于交换目标的装置及其方法

    公开(公告)号:US5429729A

    公开(公告)日:1995-07-04

    申请号:US616868

    申请日:1990-11-21

    CPC classification number: C23C14/3407 C23C14/56

    Abstract: In accordance with the present invention, in order to exchange a target under a vacuum condition without communicating a film-forming chamber with the atmosphere for exchange of the target, a substrate is located in a vacuum vessel and an opening portion is provided on a wall surface of the vacuum vessel opposite to the substrate which is formed with a thin film on its surface. A target exchanging chamber is disposed adjacent to the vacuum vessel so as to be communicated therewith through the opening portion. During film-formation, the interior of the vacuum vessel is maintained in a vacuum state by closing the opening portion with the target while the target exchanging chamber is communicated with the atmosphere and a spare target is contained therein. When exchanging the target, the air in the target exchanging chamber is exhausted to maintain the chamber in a vacuum state and the target is replaced with the spare target.

    Abstract translation: 根据本发明,为了在真空条件下更换靶,而不使成膜室与用于更换靶的气氛相通,则基板位于真空容器中,开口部分设置在壁上 表面与在其表面上形成有薄膜的基板相对的真空容器的表面。 目标交换室邻近真空容器设置,以便通过开口部与其连通。 在成膜期间,通过在目标交换室与大气连通并且备用目标物被容纳在其中的同时通过用目标物关闭开口部分将真空容器的内部保持在真空状态。 当更换目标时,目标交换室中的空气被排出以将室维持在真空状态,并且目标被替换为备用目标。

    Vacuum treatment apparatus and vacuum treatment method
    10.
    发明授权
    Vacuum treatment apparatus and vacuum treatment method 失效
    真空处理装置和真空处理方法

    公开(公告)号:US5061356A

    公开(公告)日:1991-10-29

    申请号:US485526

    申请日:1990-02-27

    CPC classification number: H01L21/68792 C23C14/50 C23C14/568

    Abstract: A vacuum treatment apparatus includes a vacuum chamber having a first treatment position and at least one second treatment position where a substrate supported on a substrate stage subjected to a vacuum treatment. A drive device is operatively connected to a holding device to drive the same so that the holding device can move the substrate stage between the first and second treatment positions. The drive device is also operable to drive the holding device so that the holding device can rotate the substrate stage about the axis thereof at the first treatment position. A rotating device is provided for rotating the substrate stage about the axis thereof when the substrate stage is disposed at the second treatment position.

    Abstract translation: 真空处理装置包括具有第一处理位置的真空室和至少一个第二处理位置,其中支撑在经过真空处理的基板台上的基板。 驱动装置可操作地连接到保持装置以驱动它,使得保持装置可以在第一和第二处理位置之间移动衬底台。 驱动装置还可操作以驱动保持装置,使得保持装置可以在第一处理位置使基板台围绕其轴线旋转。 提供了一种旋转装置,用于当衬底台设置在第二处理位置时使衬底台围绕其轴线旋转。

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