发明授权
- 专利标题： Schottky diode manufacturing process employing the synthesis of a polycrystalline diamond thin film
- 专利标题（中）： 使用多晶金刚石薄膜合成的肖特基二极管制造工艺
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申请号： US584110申请日： 1990-09-18
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公开(公告)号： US5086014A公开(公告)日： 1992-02-04
- 发明人: Koichi Miyata , Kazuo Kumagai , Koji Kobashi , Yuichi Matsui , Akimitsu Nakaue
- 申请人： Koichi Miyata , Kazuo Kumagai , Koji Kobashi , Yuichi Matsui , Akimitsu Nakaue
- 申请人地址： JPX Kobe
- 专利权人： Kabushiki Kaisha Kobe Seiko Sho
- 当前专利权人： Kabushiki Kaisha Kobe Seiko Sho
- 当前专利权人地址： JPX Kobe
- 优先权： JPX1-244399 19890919
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; H01L21/04 ; H01L21/20 ; H01L21/285 ; H01L29/16 ; H01L29/45 ; H01L29/47 ; H01L29/862 ; H01L29/872
摘要：
A schottky diode manufacturing process employing diamond film comprises forming a B-doped p-type polycrystalline diamond film on a low-resistance p-type Si substrate by CVD using a source gas consisting of CH.sub.4, H.sub.2 and B.sub.2 H.sub.6, forming an ohmic contact on the back of the p-type Si substrate, and forming a metal electrode of Al, Pt Au, Ti or W on the B-doped p-type polycrystalline diamond film. The B/C concentration ratio of the source gas is greater than 0.01 ppm and less than 20 ppm.